InAs Quantum Dot Formation Studied at the Atomic Scale by Cross-sectional Scanning Tunnelling Microscopy

Ulloa Herrero, José María; Offermans, P. y Koenraad, P.M. (2008). InAs Quantum Dot Formation Studied at the Atomic Scale by Cross-sectional Scanning Tunnelling Microscopy. En: "Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics". Elsevier, Amsterdam, Paises Bajos, pp. 165-200. ISBN 978-0-08-046325-4. https://doi.org/10.1016/B978-0-08-046325-4.00005-0.

Descripción

Título: InAs Quantum Dot Formation Studied at the Atomic Scale by Cross-sectional Scanning Tunnelling Microscopy
Autor/es:
  • Ulloa Herrero, José María
  • Offermans, P.
  • Koenraad, P.M.
Tipo de Documento: Sección de Libro
Título del Libro: Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics
Fecha: 2008
ISBN: 978-0-08-046325-4
Materias:
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Otro
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

Texto completo

[img]
Vista Previa
PDF (Document Portable Format) - Se necesita un visor de ficheros PDF, como GSview, Xpdf o Adobe Acrobat Reader
Descargar (4MB) | Vista Previa

Resumen

Self-assembled quantum dots (QDs) have attracted much attention in the last years. These nanostructures are very interesting from a scientifi c point of view because they form nearly ideal zero-dimensional systems in which quantum confi nement effects become very important. These unique properties also make them very interesting from a technological point of view. For example, InAs QDs are employed in QD lasers, single electron transistors, midinfrared detectors, single-photon sources, etc. InAs QDs are commonly created by the Stranski–Krastanov growth mode when InAs is deposited on a substrate with a bigger lattice constant, like GaAs or InP [10] . Above a certain critical thickness of InAs, three-dimensional islands are spontaneously formed on top of a wetting layer (WL) to reduce the strain energy. Once created, the QDs are subsequently capped, a step which is required for any device application. Self-assembled quantum dots (QDs) have attracted much attention in the last years. These nanostructures are very interesting from a scientifi c point of view because they form nearly ideal zero-dimensional systems in which quantum confi nement effects become very important. These unique properties also make them very interesting from a technological point of view. For example, InAs QDs are employed in QD lasers, single electron transistors, midinfrared detectors, single-photon sources, etc. InAs QDs are commonly created by the Stranski–Krastanov growth mode when InAs is deposited on a substrate with a bigger lattice constant, like GaAs or InP. Above a certain critical thickness of InAs, three-dimensional islands are spontaneously formed on top of a wetting layer (WL) to reduce the strain energy. Once created, the QDs are subsequently capped, a step which is required for any device application.

Más información

ID de Registro: 4786
Identificador DC: http://oa.upm.es/4786/
Identificador OAI: oai:oa.upm.es:4786
Identificador DOI: 10.1016/B978-0-08-046325-4.00005-0
URL Oficial: http://www.sciencedirect.com/science/book/9780080463254
Depositado por: Memoria Investigacion
Depositado el: 29 Oct 2010 10:00
Ultima Modificación: 20 Abr 2016 13:51
  • Open Access
  • Open Access
  • Sherpa-Romeo
    Compruebe si la revista anglosajona en la que ha publicado un artículo permite también su publicación en abierto.
  • Dulcinea
    Compruebe si la revista española en la que ha publicado un artículo permite también su publicación en abierto.
  • Recolecta
  • e-ciencia
  • Observatorio I+D+i UPM
  • OpenCourseWare UPM