InAs Quantum Dot Formation Studied at the Atomic Scale by Cross-sectional Scanning Tunnelling Microscopy

Ulloa Herrero, José María and Offermans, P. and Koenraad, P.M. (2008). InAs Quantum Dot Formation Studied at the Atomic Scale by Cross-sectional Scanning Tunnelling Microscopy. In: "Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics". Elsevier, Amsterdam, Paises Bajos, pp. 165-200. ISBN 978-0-08-046325-4. https://doi.org/10.1016/B978-0-08-046325-4.00005-0.

Description

Title: InAs Quantum Dot Formation Studied at the Atomic Scale by Cross-sectional Scanning Tunnelling Microscopy
Author/s:
  • Ulloa Herrero, José María
  • Offermans, P.
  • Koenraad, P.M.
Item Type: Book Section
Title of Book: Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics
Date: 2008
ISBN: 978-0-08-046325-4
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Self-assembled quantum dots (QDs) have attracted much attention in the last years. These nanostructures are very interesting from a scientifi c point of view because they form nearly ideal zero-dimensional systems in which quantum confi nement effects become very important. These unique properties also make them very interesting from a technological point of view. For example, InAs QDs are employed in QD lasers, single electron transistors, midinfrared detectors, single-photon sources, etc. InAs QDs are commonly created by the Stranski–Krastanov growth mode when InAs is deposited on a substrate with a bigger lattice constant, like GaAs or InP [10] . Above a certain critical thickness of InAs, three-dimensional islands are spontaneously formed on top of a wetting layer (WL) to reduce the strain energy. Once created, the QDs are subsequently capped, a step which is required for any device application. Self-assembled quantum dots (QDs) have attracted much attention in the last years. These nanostructures are very interesting from a scientifi c point of view because they form nearly ideal zero-dimensional systems in which quantum confi nement effects become very important. These unique properties also make them very interesting from a technological point of view. For example, InAs QDs are employed in QD lasers, single electron transistors, midinfrared detectors, single-photon sources, etc. InAs QDs are commonly created by the Stranski–Krastanov growth mode when InAs is deposited on a substrate with a bigger lattice constant, like GaAs or InP. Above a certain critical thickness of InAs, three-dimensional islands are spontaneously formed on top of a wetting layer (WL) to reduce the strain energy. Once created, the QDs are subsequently capped, a step which is required for any device application.

More information

Item ID: 4786
DC Identifier: http://oa.upm.es/4786/
OAI Identifier: oai:oa.upm.es:4786
DOI: 10.1016/B978-0-08-046325-4.00005-0
Official URL: http://www.sciencedirect.com/science/book/9780080463254
Deposited by: Memoria Investigacion
Deposited on: 29 Oct 2010 10:00
Last Modified: 20 Apr 2016 13:51
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