Assessment of rear-surface processing strategies for III-V on Si multijunction solar cells based on numerical simulations

Martín Martín, Diego; Garcia Tabares Valdivieso, Elisa y Rey-Stolle Prado, Ignacio (2016). Assessment of rear-surface processing strategies for III-V on Si multijunction solar cells based on numerical simulations. "IEEE Transactions on Electron Devices", v. 63 (n. 1); pp. 252-258. ISSN 0018-9383. https://doi.org/10.1109/TED.2015.2498527.

Descripción

Título: Assessment of rear-surface processing strategies for III-V on Si multijunction solar cells based on numerical simulations
Autor/es:
  • Martín Martín, Diego
  • Garcia Tabares Valdivieso, Elisa
  • Rey-Stolle Prado, Ignacio
Tipo de Documento: Artículo
Título de Revista/Publicación: IEEE Transactions on Electron Devices
Fecha: 1 Enero 2016
Volumen: 63
Materias:
Palabras Clave Informales: Silicon, Photovoltaic cells, Passivation, Computer Architecture, Microprocessors, Epitaxial growth
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

The manufacturing of high-efficiency III-V on Si multijunction solar cells needs the development of hybrid, i.e., adapted to both families of materials, solar cell processing techniques, able to extract the full photovoltaic potential of both the subcells. This fact especially impacts the processing of the silicon rear surface of the tandem, which cannot receive treatments commonly used in the single-junction Si solar cell industry [Al-back surface field (BSF), thermal SiO2, and so on], since these would result in an excessive thermal load that would deteriorate the III-V upper layers (top cell, tunnel junction, and buffer layer). However, the Si bottom cell requires an advanced design with good rear passivation, a good ohmic contact, and good carrier selectivity, so that its contribution to the efficiency of the tandem is maximized. Accordingly, in this paper, several low-temperature compatible rear-surface passivation techniques for the Si bottom subcell in a monolithic III-V/Si tandem solar cell are explored. In particular, aluminum BSFs, passivated emitter and rear cell (PERC)-like architecture, passivated emitter and rear locally diffused (PERL)-like architecture formed with low thermal loads, and heterojunction with intrinsic thin layer (HIT)-like processes are assessed using numerical simulations, and a comparison of the Si bottom cell performance for the mentioned alternatives in a GaAsP/Si dual-junction solar cell is presented.

Más información

ID de Registro: 47890
Identificador DC: http://oa.upm.es/47890/
Identificador OAI: oai:oa.upm.es:47890
Identificador DOI: 10.1109/TED.2015.2498527
URL Oficial: http://ieeexplore.ieee.org/abstract/document/7335645/
Depositado por: Memoria Investigacion
Depositado el: 13 Nov 2017 17:31
Ultima Modificación: 13 Nov 2017 17:31
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