Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopies

López Escalante, María Cruz and Gabás Pérez, María Mercedes and García Vara, Iván and Barrigón Montañés, Enrique and Rey-Stolle Prado, Ignacio and Algora del Valle, Carlos and Palanco López, Santiago and Ramos Barrado, José Ramón (2015). Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopies. "Applied Surface Science", v. 360 (n. B); pp. 477-484. ISSN 0169-4332. https://doi.org/10.1016/j.apsusc.2015.10.098.

Description

Title: Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopies
Author/s:
  • López Escalante, María Cruz
  • Gabás Pérez, María Mercedes
  • García Vara, Iván
  • Barrigón Montañés, Enrique
  • Rey-Stolle Prado, Ignacio
  • Algora del Valle, Carlos
  • Palanco López, Santiago
  • Ramos Barrado, José Ramón
Item Type: Article
Título de Revista/Publicación: Applied Surface Science
Date: November 2015
Volume: 360
Subjects:
Freetext Keywords: III–V semiconductors, GaInP, AlInP, ARXPS, Depth profiling, Interfaces
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

GaAs/GaInP and GaAs/AlInP interfaces have been studied using photoelectron spectroscopy tools. The combination of depth profile through Ar+ sputtering and angle resolved X-ray photoelectron spectroscopy provides reliable information on the evolution of the interface chemistry. Measurement artifacts related to each particular technique can be ruled out on the basis of the results obtained with the other technique. GaAs/GaInP interface spreads out over a shorter length than GaAs/AlInP interface. The former could include the presence of the quaternary GaInAsP in addition to the nominal GaAs and GaInP layers. On the contrary, the GaAs/AlInP interface exhibits a higher degree of compound mixture. Namely, traces of P atoms in a chemical environment different to the usual AlInP coordination were found at the top of the GaAs/AlInP interface, as well as mixed phases like AlInP, GaInAsP or AlGaInAsP, located at the interface.

Funding Projects

TypeCodeAcronymLeaderTitle
Government of SpainTEC2011-28639-01UnspecifiedUnspecifiedUnspecified
Government of SpainTEC2011-28639-02UnspecifiedUnspecifiedUnspecified
Madrid Regional GovernmentS2013/MAE-2780UnspecifiedUnspecifiedUnspecified
Government of SpainTEC2014-54260-C3-01UnspecifiedUnspecifiedUnspecified
Government of SpainTEC2014-54260-C3-03UnspecifiedUnspecifiedUnspecified

More information

Item ID: 47897
DC Identifier: http://oa.upm.es/47897/
OAI Identifier: oai:oa.upm.es:47897
DOI: 10.1016/j.apsusc.2015.10.098
Official URL: https://www.sciencedirect.com/science/article/pii/S0169433215025179?via%3Dihub
Deposited by: Memoria Investigacion
Deposited on: 30 Jan 2018 17:21
Last Modified: 30 Jan 2018 17:21
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