The effect of Sb-surfactant on GaInP CuPtB type ordering: Assessment through dark field TEM and aberration corrected HAADF imaging

Coll, Catalina and Barrigón Montañés, Enrique and López-Conesa, L. and Rebled, J. and Barrutia Poncela, Laura and Rey-Stolle Prado, Ignacio and Estradé, S. and Algora del Valle, Carlos and Peiró, F. (2017). The effect of Sb-surfactant on GaInP CuPtB type ordering: Assessment through dark field TEM and aberration corrected HAADF imaging. "Physical Chemistry Chemical Physics", v. 19 (n. 15); pp. 9806-9810. ISSN 1463-9076. https://doi.org/10.1039/c7cp01125c.

Description

Title: The effect of Sb-surfactant on GaInP CuPtB type ordering: Assessment through dark field TEM and aberration corrected HAADF imaging
Author/s:
  • Coll, Catalina
  • Barrigón Montañés, Enrique
  • López-Conesa, L.
  • Rebled, J.
  • Barrutia Poncela, Laura
  • Rey-Stolle Prado, Ignacio
  • Estradé, S.
  • Algora del Valle, Carlos
  • Peiró, F.
Item Type: Article
Título de Revista/Publicación: Physical Chemistry Chemical Physics
Date: June 2017
ISSN: 1463-9076
Volume: 19
Subjects:
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Electrónica Física
UPM's Research Group: Semiconductores III-V
Creative Commons Licenses: None

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Abstract

We report on the effect of Sb on the microstructure of GaInP layers grown by metal organic vapor phase epitaxy (MOVPE). These layers exhibit a CuPtB single variant ordering due to the intentional misorientation of the substrate (Ge(001) substrates with 6°misorientation towards the nearest [111] axis). The use of Sb as a surfactant during the GaInP growth does not modify the type of ordering, but it is found that the order parameter (η) decreases with increasing Sb flux. Dark field microscopy reveals a variation of the angle of the antiphase boundaries (APBs) with Sb amount. The microstructure is assessed through high angle annular dark field (HAADF) experiments and image simulation revealing Z-contrast loss in APBs due to the superposition of ordered domains. © the Owner Societies 2017.

Funding Projects

TypeCodeAcronymLeaderTitle
FP7607153LONGESSTIQE plcLow Cost Germanium Substrates for Next Generation 4-Junction Space Solar Cells Utilising Dilute Nitride Technology
Government of SpainTEC2014-54260-C3-1-PENARUnspecifiedEvaluación de arquitecturas de nueva generación en células solares multiunión para lograr eficiencias del 50%
Government of SpainPCIN-2015-181-C02-02UnspecifiedUnspecifiedUnspecified
Government of SpainMAT2013-41506UnspecifiedUnspecifiedMicroscopia electronica de transmision: modos avanzados y tratamiento de datos para elucidar propiedades de los materiales
Government of SpainMAT2016-79455-PUnspecifiedUnspecifiedDesarrollo de métodos de precesion electronica, tomografía y técnicas analíticas en el tem para la elucidacion
Madrid Regional GovernmentS2013/MAE-2780MADRID-PVUnspecifiedMateriales, dispositivos y tecnología para el desarrollo de la Industria fotovoltaica

More information

Item ID: 48240
DC Identifier: http://oa.upm.es/48240/
OAI Identifier: oai:oa.upm.es:48240
DOI: 10.1039/c7cp01125c
Official URL: http://pubs.rsc.org/en/content/articlelanding/2017/cp/c7cp01125c#!divAbstract
Deposited by: Dr Ignacio Rey-Stolle
Deposited on: 24 Oct 2017 09:10
Last Modified: 01 Nov 2018 23:30
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