Design Optimization and Fabrication of a Novel Structural SOI Piezoresistive Pressure Sensor with High Accuracy

Li, Chuang and Cordovilla Baró, Francisco and Jagdheesh, Radhakrishnan and Ocaña Moreno, José Luis (2018). Design Optimization and Fabrication of a Novel Structural SOI Piezoresistive Pressure Sensor with High Accuracy. "Sensors" (n. 18); pp.. ISSN 1424-8220. https://doi.org/10.3390/s18020439.

Description

Title: Design Optimization and Fabrication of a Novel Structural SOI Piezoresistive Pressure Sensor with High Accuracy
Author/s:
  • Li, Chuang
  • Cordovilla Baró, Francisco
  • Jagdheesh, Radhakrishnan
  • Ocaña Moreno, José Luis
Item Type: Article
Título de Revista/Publicación: Sensors
Date: 2018
ISSN: 1424-8220
Subjects:
Freetext Keywords: piezoresistive pressure sensor; high sensitivity; low pressure nonlinearity error; SOI structure; micro-pressure measurement
Faculty: E.T.S.I. Industriales (UPM)
Department: Física Aplicada a la Ingeniería Industrial [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

Full text

[img]
Preview
PDF - Requires a PDF viewer, such as GSview, Xpdf or Adobe Acrobat Reader
Download (5MB) | Preview

Abstract

This paper presents a novel structural piezoresistive pressure sensor with four-grooved membrane combined with rood beam to measure low pressure. In this investigation, the design, optimization, fabrication, and measurements of the sensor are involved. By analyzing the stress distribution and deflection of sensitive elements using finite element method, a novel structure featuring high concentrated stress profile (HCSP) and locally stiffened membrane (LSM) is built. Curve fittings of the mechanical stress and deflection based on FEM simulation results are performed to establish the relationship between mechanical performance and structure dimension. A combination of FEM and curve fitting method is carried out to determine the structural dimensions. The optimized sensor chip is fabricated on a SOI wafer by traditional MEMS bulk-micromachining and anodic bonding technology. When the applied pressure is 1 psi, the sensor achieves a sensitivity of 30.9 mV/V/psi, a pressure nonlinearity of 0.21% FSS and an accuracy of 0.30%, and thereby the contradiction between sensitivity and linearity is alleviated. In terms of size, accuracy and high temperature characteristic, the proposed sensor is a proper choice for measuring pressure of less than 1 psi.

Funding Projects

TypeCodeAcronymLeaderTitle
Unspecified201508320275UnspecifiedChina Scholarship Council (CSC)Unspecified
Unspecified2015-1-ES01-KA107-015460UnspecifiedUnspecifiedErasmus+ project

More information

Item ID: 49699
DC Identifier: http://oa.upm.es/49699/
OAI Identifier: oai:oa.upm.es:49699
DOI: 10.3390/s18020439
Official URL: https://www.ncbi.nlm.nih.gov/pubmed/29393916
Deposited by: Memoria Investigacion
Deposited on: 12 Mar 2018 15:05
Last Modified: 21 May 2019 15:58
  • Logo InvestigaM (UPM)
  • Logo GEOUP4
  • Logo Open Access
  • Open Access
  • Logo Sherpa/Romeo
    Check whether the anglo-saxon journal in which you have published an article allows you to also publish it under open access.
  • Logo Dulcinea
    Check whether the spanish journal in which you have published an article allows you to also publish it under open access.
  • Logo de Recolecta
  • Logo del Observatorio I+D+i UPM
  • Logo de OpenCourseWare UPM