Design Optimization and Fabrication of a Novel Structural SOI Piezoresistive Pressure Sensor with High Accuracy

Li, Chuang; Cordovilla Baro, Francisco; Jagdheesh, Radhakrishnan y Ocaña Moreno, José Luis (2018). Design Optimization and Fabrication of a Novel Structural SOI Piezoresistive Pressure Sensor with High Accuracy. "Sensors" (n. 18); pp.. ISSN 1424-8220. https://doi.org/10.3390/s18020439.

Descripción

Título: Design Optimization and Fabrication of a Novel Structural SOI Piezoresistive Pressure Sensor with High Accuracy
Autor/es:
  • Li, Chuang
  • Cordovilla Baro, Francisco
  • Jagdheesh, Radhakrishnan
  • Ocaña Moreno, José Luis
Tipo de Documento: Artículo
Título de Revista/Publicación: Sensors
Fecha: 2018
Materias:
Palabras Clave Informales: piezoresistive pressure sensor; high sensitivity; low pressure nonlinearity error; SOI structure; micro-pressure measurement
Escuela: E.T.S.I. Industriales (UPM)
Departamento: Física Aplicada a la Ingeniería Industrial [hasta 2014]
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

This paper presents a novel structural piezoresistive pressure sensor with four-grooved membrane combined with rood beam to measure low pressure. In this investigation, the design, optimization, fabrication, and measurements of the sensor are involved. By analyzing the stress distribution and deflection of sensitive elements using finite element method, a novel structure featuring high concentrated stress profile (HCSP) and locally stiffened membrane (LSM) is built. Curve fittings of the mechanical stress and deflection based on FEM simulation results are performed to establish the relationship between mechanical performance and structure dimension. A combination of FEM and curve fitting method is carried out to determine the structural dimensions. The optimized sensor chip is fabricated on a SOI wafer by traditional MEMS bulk-micromachining and anodic bonding technology. When the applied pressure is 1 psi, the sensor achieves a sensitivity of 30.9 mV/V/psi, a pressure nonlinearity of 0.21% FSS and an accuracy of 0.30%, and thereby the contradiction between sensitivity and linearity is alleviated. In terms of size, accuracy and high temperature characteristic, the proposed sensor is a proper choice for measuring pressure of less than 1 psi.

Proyectos asociados

TipoCódigoAcrónimoResponsableTítulo
Sin especificar201508320275Sin especificarChina Scholarship Council (CSC)Sin especificar
Sin especificar2015-1-ES01-KA107-015460Sin especificarSin especificarErasmus+ project

Más información

ID de Registro: 49699
Identificador DC: http://oa.upm.es/49699/
Identificador OAI: oai:oa.upm.es:49699
Identificador DOI: 10.3390/s18020439
URL Oficial: https://www.ncbi.nlm.nih.gov/pubmed/29393916
Depositado por: Memoria Investigacion
Depositado el: 12 Mar 2018 15:05
Ultima Modificación: 12 Mar 2018 18:56
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