Effect of Ge autodoping during III-V MOVPE growth on Ge substrates

Barrutia Poncela, Laura and Barrigón Montañés, Enrique and García Vara, Iván and Rey-Stolle Prado, Ignacio and Algora Del Valle, Carlos (2017). Effect of Ge autodoping during III-V MOVPE growth on Ge substrates. "Journal of Crystal Growth", v. 475 ; pp. 378-383. ISSN 0022-0248. https://doi.org/10.1016/j.jcrysgro.2017.06.022.

Description

Title: Effect of Ge autodoping during III-V MOVPE growth on Ge substrates
Author/s:
  • Barrutia Poncela, Laura
  • Barrigón Montañés, Enrique
  • García Vara, Iván
  • Rey-Stolle Prado, Ignacio
  • Algora Del Valle, Carlos
Item Type: Article
Título de Revista/Publicación: Journal of Crystal Growth
Date: October 2017
Volume: 475
Subjects:
Freetext Keywords: III-V semiconductor Ge autodoping GaInP solar cells Multijunction solar cell
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Electrónica Física
UPM's Research Group: Semiconductores III-V
Creative Commons Licenses: None

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Abstract

During the MOVPE growth of III-V layers on Ge substrates, Ge atoms can be evaporated or etched from the back of the wafer and reach the growth surface, becoming incorporated into the epilayers. This is the so-called Ge autodoping effect, which we have studied through a set of growth experiments of GaInP and Ga(In)As layers lattice matched to Ge substrates, which have been characterized by Secondary Ion Mass Spectroscopy. The role of V/III ratio and growth rate on Ge autodoping has been studied and a MOVPE reactor pre-conditioning prior to the epitaxial growth of III-V semiconductor layers that mitigates this Ge autodoping has been identified. In addition, the use of 2-in. versus 4-in. Ge substrates has been compared and the use of a Si3N4 backside coating for the Ge substrates has been evaluated.

Funding Projects

TypeCodeAcronymLeaderTitle
Government of SpainTEC2015-66722-RUnspecifiedUnspecifiedCélulas tandem III-V/SI: hacia una tecnología fotovoltaica de panel plano con células multiunion
Government of SpainTEC2014-54260-C3-1-PUnspecifiedUnspecifiedEvaluación de arquitecturas de nueva generación en células solares multiunion para lograr eficiencias del 50%
Madrid Regional GovernmentS2013/MAE-2780MADRID-PVMarti Vega, AntonioMateriales, dispositivos y tecnología para el desarrollo de la Industria fotovoltaica
FP7607153LONGESSTIQE plcLow Cost Germanium Substrates for Next Generation 4-Junction Space Solar Cells Utilising Dilute Nitride Technology
Horizon 2020656208NEXTNANOCELLSLUNDS UNIVERSITETNext generation nanowire solar cells

More information

Item ID: 50011
DC Identifier: http://oa.upm.es/50011/
OAI Identifier: oai:oa.upm.es:50011
DOI: 10.1016/j.jcrysgro.2017.06.022
Official URL: http://www.sciencedirect.com/science/article/pii/S0022024817304396
Deposited by: Dr Ignacio Rey-Stolle
Deposited on: 06 Apr 2018 08:19
Last Modified: 01 Dec 2018 23:30
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