Vanadium supersaturated silicon system: a theoretical and experimental approach

Palacios Clemente, Pablo and Wahnon Benarroch, Perla and Garcia Hemme, Eric and Garcia, Gregorio and Montero, Daniel and Garcia Hernansanz, Rodrigo and Gonzalez-diaz, German (2017). Vanadium supersaturated silicon system: a theoretical and experimental approach. "Journal of Physics D: Applied Physics", v. 50 (n. 49); ISSN 0022-3727. https://doi.org/10.1088/1361-6463/aa9360.

Description

Title: Vanadium supersaturated silicon system: a theoretical and experimental approach
Author/s:
  • Palacios Clemente, Pablo
  • Wahnon Benarroch, Perla
  • Garcia Hemme, Eric
  • Garcia, Gregorio
  • Montero, Daniel
  • Garcia Hernansanz, Rodrigo
  • Gonzalez-diaz, German
Item Type: Article
Título de Revista/Publicación: Journal of Physics D: Applied Physics
Date: 2017
Volume: 50
Subjects:
Faculty: E.T.S. de Ingeniería Aeronáutica y del Espacio (UPM)
Department: Física Aplicada a las Ingenierías Aeronáutica y Naval
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The effect of high dose vanadium ion implantation and pulsed laser annealing on the crystal structure and sub-bandgap optical absorption features of V-supersaturated silicon samples has been studied through the combination of experimental and theoretical approaches. Interest in V-supersaturated Si focusses on its potential as a material having a new band within the Si bandgap. Rutherford backscattering spectrometry measurements and formation energies computed through quantum calculations provide evidence that V atoms are mainly located at interstitial positions. The response of sub-bandgap spectral photoconductance is extended far into the infrared region of the spectrum. Theoretical simulations (based on density functional theory and many-body perturbation in GW approximation) bring to light that, in addition to V atoms at interstitial positions, Si defects should also be taken into account in explaining the experimental profile of the spectral photoconductance. The combination of experimental and theoretical methods provides evidence that the improved spectral photoconductance up to 6.2 µm (0.2 eV) is due to new sub-bandgap transitions, for which the new band due to V atoms within the Si bandgap plays an essential role. This enables the use of V-supersaturated silicon in the third generation of photovoltaic devices

Funding Projects

TypeCodeAcronymLeaderTitle
Madrid Regional GovernmentS2013/MAE-2780MADRID-PVUnspecifiedMateriales, dispositivos y tecnología para el desarrollo de la industria fotovoltaica
Government of SpainTEC2013-41730-RUnspecifiedUnspecifiedFabricación de dispositivos detectores de infrarrojo próximo mediante SI supersaturado con metales de transición
Government of SpainENE2016-77798-C4-4-RUnspecifiedUnspecifiedAprovechamiento de luz solar mediante un proceso de dos fotones

More information

Item ID: 50152
DC Identifier: http://oa.upm.es/50152/
OAI Identifier: oai:oa.upm.es:50152
DOI: 10.1088/1361-6463/aa9360
Official URL: https://iopscience.iop.org/article/10.1088/1361-6463/aa9360#acknowledgements
Deposited by: Memoria Investigacion
Deposited on: 08 Feb 2019 10:46
Last Modified: 30 May 2019 08:26
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