First principle study of V-implantation in highly-doped silicon materials

García López de la Osa, Gregorio and Casanova Páez, Marcos and Palacios Clemente, Pablo and Menéndez Proupin, Eduardo and Wahnón Benarroch, Perla (2017). First principle study of V-implantation in highly-doped silicon materials. "Computational Materials Science", v. 136 ; pp. 207-215. ISSN 0927-0256. https://doi.org/10.1016/j.commatsci.2017.05.005.

Description

Title: First principle study of V-implantation in highly-doped silicon materials
Author/s:
  • García López de la Osa, Gregorio
  • Casanova Páez, Marcos
  • Palacios Clemente, Pablo
  • Menéndez Proupin, Eduardo
  • Wahnón Benarroch, Perla
Item Type: Article
Título de Revista/Publicación: Computational Materials Science
Date: May 2017
Volume: 136
Subjects:
Freetext Keywords: Intermediate band. Sub-bandgap absorption. Infrared.DFT
Faculty: E.T.S. de Ingeniería Aeronáutica y del Espacio (UPM)
Department: Física Aplicada a las Ingenierías Aeronáutica y Naval
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Funding Projects

TypeCodeAcronymLeaderTitle
Madrid Regional GovernmentS2013/MAE/2780MADRID-PVUnspecifiedUnspecified
Government of SpainENE2013-46624-C4-2-RBOOSTERUnspecifiedUnspecified

More information

Item ID: 50177
DC Identifier: http://oa.upm.es/50177/
OAI Identifier: oai:oa.upm.es:50177
DOI: 10.1016/j.commatsci.2017.05.005
Official URL: https://www.sciencedirect.com/science/article/pii/S0927025617302355
Deposited by: Memoria Investigacion
Deposited on: 03 Aug 2018 10:44
Last Modified: 25 Mar 2019 14:20
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