Failure analysis on lattice matched GaInP/Ga(In)As/Ge commercial concentrator solar cells after temperature accelerated life tests

Orlando Carrillo, Vincenzo and Gabás, Mercedes and Galiana Blanco, Beatriz and Espinet González, Pilar and Palanco López, Santiago and Nuñez Mendoza, Neftali and Vázquez López, Manuel and Araki, Kenji and Algora del Valle, Carlos (2017). Failure analysis on lattice matched GaInP/Ga(In)As/Ge commercial concentrator solar cells after temperature accelerated life tests. "Progress in Photovoltaics", v. 25 (n. 1); pp. 97-112. ISSN 1062-7995. https://doi.org/10.1002/pip.2818.

Description

Title: Failure analysis on lattice matched GaInP/Ga(In)As/Ge commercial concentrator solar cells after temperature accelerated life tests
Author/s:
  • Orlando Carrillo, Vincenzo
  • Gabás, Mercedes
  • Galiana Blanco, Beatriz
  • Espinet González, Pilar
  • Palanco López, Santiago
  • Nuñez Mendoza, Neftali
  • Vázquez López, Manuel
  • Araki, Kenji
  • Algora del Valle, Carlos
Item Type: Article
Título de Revista/Publicación: Progress in Photovoltaics
Date: January 2017
ISSN: 1062-7995
Volume: 25
Subjects:
Freetext Keywords: CPV; failure analysis; reliability; accelerated life test; characterization
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Accelerated life tests are frequently used to provide reliability information in a moderate period of time (weeks or months), and after that, a failure analysis is compulsory to detect the failure origins. In this paper, a failure analysis has been carried out after a temperature accelerated life test on lattice matched GaInP/Ga(In)As/Ge triple junction commercial solar cells. Solar cells were forward biased in darkness inside three climatic chambers in order to emulate the photo-generated current under nominal working conditions (a concentration level of 820 suns). After the accelerated aging test, a characterization of the resulting cells by means of quantum efficiency, dark and illumination I?V curves, electroluminescence, scanning electron microscope, energy dispersive X-ray, scanning transmission electron microscope and X-ray photoelectron spectroscopy has been carried out. Current is identified as the cause of degradation while temperature just dominates the accelerating factor of the aging test. Current promotes the front metal damage produced by the chemical evolution of the electroplating impurities together with those of the tab soldering process. Semiconductor structure does not seem to be responsible of any failure. Therefore, this kind of lattice matched GaInP/Ga(In)As/Ge triple junction solar cells, that as of 2016, are the workhorse of CPV technology, exhibits as a very robust device if the front metal connection is properly accomplished.

Funding Projects

TypeCodeAcronymLeaderTitle
Madrid Regional GovernmentS2013/MAE-2780MADRID-PVUnspecifiedMateriales, dispositivos y tecnología para el desarrollo de la industria fotovoltaica
Government of SpainTEC2014-54260-C3-2-PUnspecifiedBallesteros Pérez, Carmen InésMicroscopía electrónica de transmisión en arquitecturas de células solares multiunión para eficiencias superiores al 50%. Correlación entre propiedades físicas y estructurales
Government of SpainTEC2014-54260-C3-3-PUnspecifiedUnspecifiedCaracterización estructural, espectroscópica y espectrométrica de materiales para la nueva generación de células solares multiunión que logren eficiencias del 50%
Government of SpainTEC2014-54260-C3-1-PENARCarlos AlgoraEvaluación de arquitecturas de nueva generación en células solares multiunión para lograr eficiencias del 50%

More information

Item ID: 50356
DC Identifier: http://oa.upm.es/50356/
OAI Identifier: oai:oa.upm.es:50356
DOI: 10.1002/pip.2818
Official URL: https://onlinelibrary.wiley.com/doi/abs/10.1002/pip.2818
Deposited by: Memoria Investigacion
Deposited on: 17 Sep 2018 16:33
Last Modified: 17 Sep 2018 16:33
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