MOVPE growth of GaP on Si with As initial coverage

Navarro, A. and García-Tabarés Valdivieso, Elisa and Galiana Blanco, Beatriz and Cano, P. and Rey-Stolle Prado, Ignacio and Ballesteros Pérez, Carmen Inés (2017). MOVPE growth of GaP on Si with As initial coverage. "Journal of Crystal Growth", v. 464 ; pp. 8-13. ISSN 0022-0248. https://doi.org/10.1016/j.jcrysgro.2016.11.077.

Description

Title: MOVPE growth of GaP on Si with As initial coverage
Author/s:
  • Navarro, A.
  • García-Tabarés Valdivieso, Elisa
  • Galiana Blanco, Beatriz
  • Cano, P.
  • Rey-Stolle Prado, Ignacio
  • Ballesteros Pérez, Carmen Inés
Item Type: Article
Journal/Publication Title: Journal of Crystal Growth
Date: April 2017
ISSN: 0022-0248
Volume: 464
Subjects:
Freetext Keywords: Semiconducting III-V materials; Solar cells; Metalorganic vapor phase epitaxy; Gallium compounds; Interfaces; Crystal structure and semiconducting silicon
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The growth of a GaP 50 nm layer on Si by metalorganic vapor phase epitaxy is studied using AsH3 and PH3 preexposure at low (550 °C) and high (800 °C) growth temperatures. The samples are characterized by transmission electron microscopy. The results obtained reveal that the use of As as a first coverage layer on top of misorientated Si-substrates favors the formation of a defect-free GaP epitaxial layer, for a wide range of AsH3 pre-exposure times using high growth temperature (800 °C), even though relatively low Si substrate annealing temperatures are used (850 °C) and no homoepitaxial Si layer was first grown. The procedure presented in this work reduces the thermal budget and complexity compared to most previous GaP/Si routines.

Funding Projects

TypeCodeAcronymLeaderTitle
Government of SpainTEC2014-54260-C3-2-PUnspecifiedBallesteros Pérez, Carmen InésMicroscopía electrónica de transmisión en arquitecturas de células solares multiunión para eficiencias superiores al 50%. Correlación entre propiedades físicas y estructurales
Government of SpainTEC2015-66722-RTAILLÓNIgnacio Rey-Stolle PradoCélulas tándem III-V/Si: hacia una tecnología fotovoltaica de panel plano con células multiunión

More information

Item ID: 50357
DC Identifier: http://oa.upm.es/50357/
OAI Identifier: oai:oa.upm.es:50357
DOI: 10.1016/j.jcrysgro.2016.11.077
Official URL: https://www.sciencedirect.com/science/article/pii/S0022024816307898
Deposited by: Memoria Investigacion
Deposited on: 17 May 2021 13:26
Last Modified: 17 May 2021 13:26
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