Comparison of Ti/Pd/Ag, Pd/Ti/Pd/Ag and Pd/Ge/Ti/Pd/Ag contacts to n-type GaAs for electronic devices handling high current densities

Huo, Pengyun and Galiana Blanco, Beatriz and Rey Llorente, Ignacio del (2017). Comparison of Ti/Pd/Ag, Pd/Ti/Pd/Ag and Pd/Ge/Ti/Pd/Ag contacts to n-type GaAs for electronic devices handling high current densities. "Semiconductor Science and Technology", v. 32 (n. 4); pp. 1-9. ISSN 0268-1242. https://doi.org/10.1088/1361-6641/32/4/045006.

Description

Title: Comparison of Ti/Pd/Ag, Pd/Ti/Pd/Ag and Pd/Ge/Ti/Pd/Ag contacts to n-type GaAs for electronic devices handling high current densities
Author/s:
  • Huo, Pengyun
  • Galiana Blanco, Beatriz
  • Rey Llorente, Ignacio del
Item Type: Article
Título de Revista/Publicación: Semiconductor Science and Technology
Date: 2017
Volume: 32
Subjects:
Freetext Keywords: Ohmic contact; n-GaAs; high conductivity
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

Full text

[img]
Preview
PDF - Requires a PDF viewer, such as GSview, Xpdf or Adobe Acrobat Reader
Download (12MB) | Preview

Abstract

In the quest for metal contacts for electronic devices handling high current densities, we report the results of Pd/Ti/Pd/Ag and Pd/Ge/Ti/Pd/Ag contacts to n-GaAs and compare them to Ti/ Pd/Ag and AuGe/Ni/Au. These metal systems have been designed with the goal of producing an electrical contact with (a) low metal–semiconductor specific contact resistance, (b) very high sheet conductance, (c) good bondability, (d) long-term durability and (e) cost-effectiveness. The structure of the contacts consists of an interfacial layer (either Pd or Pd/Ge) intended to produce a low metal–semiconductor specific contact resistance; a diffusion barrier (Ti/Pd) and a thick top layer of Ag to provide the desired high sheet conductance, limited cost and good bondability. The results show that both systems can achieve very low metal resistivity (ρM ∼ 2 × 10−6 Ω cm), reaching values close to that of pure bulk silver. This fact is attributed to the Ti/Pd bilayer acting as an efficient diffusion barrier, and thus the metal sheet resistance can be controlled by the thickness of the deposited silver layer. Moreover, the use of Pd as interfacial layer produces contacts with moderate specific contact resistance (ρC ∼ 10−4 Ω cm2 ) whilst the use of Pd/Ge decreases the specific contact resistance to ρC ∼ 1.5 × 10−7 Ω cm2 , as a result of the formation of a Pd4(GaAs, Ge2) compound at the GaAs interface.

Funding Projects

TypeCodeAcronymLeaderTitle
Government of SpainTEC2015-66722-RTAILLÓNIgnacio Rey-Stolle PradoCélulas tándem III-V/Si: hacia una tecnología fotovoltaica de panel plano con células multiunión

More information

Item ID: 50358
DC Identifier: http://oa.upm.es/50358/
OAI Identifier: oai:oa.upm.es:50358
DOI: 10.1088/1361-6641/32/4/045006
Official URL: http://iopscience.iop.org/article/10.1088/1361-6641/32/4/045006/meta
Deposited by: Memoria Investigacion
Deposited on: 12 Sep 2018 15:16
Last Modified: 14 May 2019 11:45
  • Logo InvestigaM (UPM)
  • Logo GEOUP4
  • Logo Open Access
  • Open Access
  • Logo Sherpa/Romeo
    Check whether the anglo-saxon journal in which you have published an article allows you to also publish it under open access.
  • Logo Dulcinea
    Check whether the spanish journal in which you have published an article allows you to also publish it under open access.
  • Logo de Recolecta
  • Logo del Observatorio I+D+i UPM
  • Logo de OpenCourseWare UPM