On the thermal degradation of tunnel diodes in multijunction solar cells

Rey-Stolle Prado, Ignacio and García Vara, Iván and Barrigón Montañés, Enrique and Olea Ariza, Javier and Pastor Escuredo, David and Ochoa Gómez, Mario and Barrutia Poncela, Laura and Algora del Valle, Carlos and Walukiewicz, W. (2017). On the thermal degradation of tunnel diodes in multijunction solar cells. In: "13th International Conference on Concentrator Photovoltaic Systems (CPV-13)", 01/05/2017 - 03/05/2017, Ottawa. ISBN 978-0-7354-1561. pp. 400051-400057. https://doi.org/10.1063/1.5001427.

Description

Title: On the thermal degradation of tunnel diodes in multijunction solar cells
Author/s:
  • Rey-Stolle Prado, Ignacio
  • García Vara, Iván
  • Barrigón Montañés, Enrique
  • Olea Ariza, Javier
  • Pastor Escuredo, David
  • Ochoa Gómez, Mario
  • Barrutia Poncela, Laura
  • Algora del Valle, Carlos
  • Walukiewicz, W.
Item Type: Presentation at Congress or Conference (Article)
Event Title: 13th International Conference on Concentrator Photovoltaic Systems (CPV-13)
Event Dates: 01/05/2017 - 03/05/2017
Event Location: Ottawa
Title of Book: Proceedings of 13th International Conference on Concentrator Photovoltaic Systems (CPV-13)
Date: 2017
ISBN: 978-0-7354-1561
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Tunnel junctions are essential components of multijunction solar cells. These highly doped p/n junctions provide the electrical interconnect between the subcells that constitute a multijunction solar cell device. The conductivity and the peak tunneling current of tunnel diodes are known to be severely affected by thermal load. This is a general phenomenon observed in tunnel junctions despite the materials used, the dopants employed or the growth technique applied. Despite this generality, the explanations for this thermal degradation tend to be quite material/dopant specific. On the contrary, in this work we apply the amphoteric native defect model to explain this issue. In this context, the degradation can be explained as a consequence of the net loss of free carrier concentration produced by the creation of native compensating defects in the highly doped layers of the tunnel junction. Experiments carried out on n++ GaAs agree well with the model.

Funding Projects

TypeCodeAcronymLeaderTitle
Madrid Regional GovernmentS2013/MAE-2780MADRID-PVUnspecifiedMateriales, dispositivos y tecnología para el desarrollo de la industria fotovoltaica
Government of SpainTEC2015-66722-RUnspecifiedUnspecifiedCélulas Tandem III-V/SI: hacia una tecnología fotovoltaica de panel plano con células multiunión
Government of SpainTEC2014-54260-C3-1-PUnspecifiedUnspecifiedEvaluación de arquitecturas de nueva generación en células solares multiunión para lograr eficiencias del 50%

More information

Item ID: 50664
DC Identifier: http://oa.upm.es/50664/
OAI Identifier: oai:oa.upm.es:50664
DOI: 10.1063/1.5001427
Official URL: https://doi.org/10.1063/1.5001427
Deposited by: Memoria Investigacion
Deposited on: 18 Sep 2018 17:24
Last Modified: 18 Sep 2018 17:24
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