Al-based front contacts for HCPV solar cell

Huo, Pengyun and Rey Stolle Prado, Ignacio (2017). Al-based front contacts for HCPV solar cell. In: "13th International Conference on Concentrator Photovoltaic Systems (CPV-13)", 01/05/2017 - 03/05/2017, Ottawa, Canada. ISBN 978-0-7354-1561. pp. 400041-400046. https://doi.org/10.1063/1.5001426.

Description

Title: Al-based front contacts for HCPV solar cell
Author/s:
  • Huo, Pengyun
  • Rey Stolle Prado, Ignacio
Item Type: Presentation at Congress or Conference (Article)
Event Title: 13th International Conference on Concentrator Photovoltaic Systems (CPV-13)
Event Dates: 01/05/2017 - 03/05/2017
Event Location: Ottawa, Canada
Title of Book: Proceedings of 13th International Conference on Concentrator Photovoltaic Systems (CPV-13)
Date: 2017
ISBN: 978-0-7354-1561
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

One of the key design challenges for high efficiency concentrator solar cells is to minimize the impact of ohmic losses associated with the large current densities that these devices handle. Typically, the most critical component of the series resistance is that of the front contact. On the one hand, in order to minimize its metal-semiconductor specific contact resistance, AuGeNi alloys are frequently used at the interface. On the other hand, to minimize the metal sheet resistance in the grid, thick silver layers are used, sometimes even coated with a gold capping layer. Such configuration results in a contact with good performance, but with elevated cost, and sometimes prone to suffering from degradation problems (electromigration, spiking, ?) and deteriorated metal sheet conductance due to the interdiffusion between GaAs and the metals in the contact. In this work, we have explored a low cost high performance alternative based on Pd/Ge/Ti/Pd/Al metal stacks. The thicker top Al layer offers low metal resistivity, low cost, and good bondability; the middle Ti/Pd bilayer works as an efficient two-way diffusion barrier; and the interfacial Pd/Ge layer provides very low specific contact resistance to the GaAs contact layer. The results show that a Pd/Ge/Ti/Pd/Al front contact reduces the series resistance and thus can improve the performance of solar cells at ultrahigh concentration levels.

Funding Projects

TypeCodeAcronymLeaderTitle
Government of SpainTEC2015- 66722-RUnspecifiedUnspecifiedCélulas Tandem III-V/SI: hacia una tecnología fotovoltaica de panel plano con células multiunión

More information

Item ID: 50670
DC Identifier: http://oa.upm.es/50670/
OAI Identifier: oai:oa.upm.es:50670
DOI: 10.1063/1.5001426
Official URL: https://aip.scitation.org/doi/abs/10.1063/1.5001426
Deposited by: Memoria Investigacion
Deposited on: 25 Sep 2018 14:52
Last Modified: 25 Sep 2018 14:52
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