Phosphorus diffusion gettering efficacy in upgraded metallurgical-grade solar silicon

Jiménez Pagán, Alba; Cañizo Nadal, Carlos del; Cid, Carlos y Peral Boiza, Ana (2018). Phosphorus diffusion gettering efficacy in upgraded metallurgical-grade solar silicon. "Journal of Electronic Materials", v. n/a (n. n/a); pp. 1-4. ISSN 0361-5235. https://doi.org/10.1007/s11664-018-6331-5.

Descripción

Título: Phosphorus diffusion gettering efficacy in upgraded metallurgical-grade solar silicon
Autor/es:
  • Jiménez Pagán, Alba
  • Cañizo Nadal, Carlos del
  • Cid, Carlos
  • Peral Boiza, Ana
Tipo de Documento: Artículo
Título de Revista/Publicación: Journal of Electronic Materials
Fecha: 11 Mayo 2018
Volumen: n/a
Materias:
Palabras Clave Informales: UMG silicon, gettering, phosphorus diffusion, low-temperature annealing
Escuela: Instituto de Energía Solar (IES) (UPM)
Departamento: Electrónica Física
Grupo Investigación UPM: Silicio y Nuevos Conceptos para Células Solares
Licencias Creative Commons: Ninguna

Texto completo

[img] PDF (Document Portable Format) - Acceso permitido solamente a usuarios registrados hasta Mayo 2019 - Se necesita un visor de ficheros PDF, como GSview, Xpdf o Adobe Acrobat Reader
Descargar (0B)

Resumen

In the context of the continuous price reduction in photovoltaics (PV) in recent years, Si feedstock continues to be a relevant component in the cost breakdown of a PV module, highlighting the need for low-cost, low-capital expenditure (CAPEX) silicon technologies to further reduce this cost component. Upgraded metallurgical-grade silicon (UMG Si) has recently received much attention, improving its quality and even attaining, in some cases, solar cell efficiencies similar to those of conventional material. However, some technical challenges still have to be addressed when processing this material to compensate efficiently for the high content of impurities and contaminants. Adaptation of a conventional solar cell process to monocrystalline UMG Si wafers has been studied in this work. In particular, a tailored phosphorus diffusion gettering step followed by a low-temperature anneal at 700°C was implemented, resulting in enhanced bulk lifetime and emitter recombination properties. In spite of the need for further research and material optimization, UMG Si wafers were successfully processed, achieving efficiencies in the range of 15% for a standard laboratory solar cell process with aluminum back surface field.

Proyectos asociados

TipoCódigoAcrónimoResponsableTítulo
Gobierno de EspañaENE2014-56069-C4- 2-RTABACOCarlos del Cañizo NadalSin especificar
Comunidad de MadridS2013/MAE-2780MADRID PVAntonio Martí VegaSin especificar

Más información

ID de Registro: 50832
Identificador DC: http://oa.upm.es/50832/
Identificador OAI: oai:oa.upm.es:50832
Identificador DOI: 10.1007/s11664-018-6331-5
URL Oficial: https://doi.org/10.1007/s11664-018-6331-5
Depositado por: Profesor Titular Carlos del Cañizo Nadal
Depositado el: 16 May 2018 08:33
Ultima Modificación: 16 May 2018 08:33
  • GEO_UP4
  • Open Access
  • Open Access
  • Sherpa-Romeo
    Compruebe si la revista anglosajona en la que ha publicado un artículo permite también su publicación en abierto.
  • Dulcinea
    Compruebe si la revista española en la que ha publicado un artículo permite también su publicación en abierto.
  • Recolecta
  • InvestigaM
  • Observatorio I+D+i UPM
  • OpenCourseWare UPM