Phosphorus diffusion gettering efficacy in upgraded metallurgical-grade solar silicon

Jiménez Pagán, Alba and Cañizo Nadal, Carlos del and Cid, Carlos and Peral Boiza, Ana (2018). Phosphorus diffusion gettering efficacy in upgraded metallurgical-grade solar silicon. "Journal of Electronic Materials", v. n/a (n. n/a); pp. 1-4. ISSN 0361-5235. https://doi.org/10.1007/s11664-018-6331-5.

Description

Title: Phosphorus diffusion gettering efficacy in upgraded metallurgical-grade solar silicon
Author/s:
  • Jiménez Pagán, Alba
  • Cañizo Nadal, Carlos del
  • Cid, Carlos
  • Peral Boiza, Ana
Item Type: Article
Título de Revista/Publicación: Journal of Electronic Materials
Date: 11 May 2018
ISSN: 0361-5235
Volume: n/a
Subjects:
Freetext Keywords: UMG silicon, gettering, phosphorus diffusion, low-temperature annealing
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Electrónica Física
UPM's Research Group: Silicio y Nuevos Conceptos para Células Solares
Creative Commons Licenses: None

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Abstract

In the context of the continuous price reduction in photovoltaics (PV) in recent years, Si feedstock continues to be a relevant component in the cost breakdown of a PV module, highlighting the need for low-cost, low-capital expenditure (CAPEX) silicon technologies to further reduce this cost component. Upgraded metallurgical-grade silicon (UMG Si) has recently received much attention, improving its quality and even attaining, in some cases, solar cell efficiencies similar to those of conventional material. However, some technical challenges still have to be addressed when processing this material to compensate efficiently for the high content of impurities and contaminants. Adaptation of a conventional solar cell process to monocrystalline UMG Si wafers has been studied in this work. In particular, a tailored phosphorus diffusion gettering step followed by a low-temperature anneal at 700°C was implemented, resulting in enhanced bulk lifetime and emitter recombination properties. In spite of the need for further research and material optimization, UMG Si wafers were successfully processed, achieving efficiencies in the range of 15% for a standard laboratory solar cell process with aluminum back surface field.

Funding Projects

TypeCodeAcronymLeaderTitle
Government of SpainENE2014-56069-C4- 2-RTABACOCarlos del Cañizo NadalCélulas tandem en silicio de bajo coste con obleas muy delgadas y procesos apropiados
Madrid Regional GovernmentS2013/MAE-2780MADRID PVAntonio Martí VegaMateriales, dispositivos y tecnología para el desarrollo de la industria fotovoltaica

More information

Item ID: 50832
DC Identifier: http://oa.upm.es/50832/
OAI Identifier: oai:oa.upm.es:50832
DOI: 10.1007/s11664-018-6331-5
Official URL: https://doi.org/10.1007/s11664-018-6331-5
Deposited by: Profesor Titular Carlos del Cañizo Nadal
Deposited on: 16 May 2018 08:33
Last Modified: 01 Jun 2019 22:30
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