Laser-Induced Crystallization of Sputtered Unhydrogenated Silicon at Low Temperatures

Saugar, E. and González, J.P. and Fernández, S. and Gandía, J. J. and Cárabe, J. and Canteli, D. and Morales Furió, Miguel and Molpeceres Álvarez, Carlos Luis and García-Perez, F. and Gómez-Mancebo, M.B. (2017). Laser-Induced Crystallization of Sputtered Unhydrogenated Silicon at Low Temperatures. In: "EU PVSEC 2017 - 33rd European Photovoltaic Solar Energy Conference and Exhibition", 25-29 September 2017, Amsterdam, The Netherlands. ISBN 9783936338478. pp. 815-819.

Description

Title: Laser-Induced Crystallization of Sputtered Unhydrogenated Silicon at Low Temperatures
Author/s:
  • Saugar, E.
  • González, J.P.
  • Fernández, S.
  • Gandía, J. J.
  • Cárabe, J.
  • Canteli, D.
  • Morales Furió, Miguel
  • Molpeceres Álvarez, Carlos Luis
  • García-Perez, F.
  • Gómez-Mancebo, M.B.
Item Type: Presentation at Congress or Conference (Article)
Event Title: EU PVSEC 2017 - 33rd European Photovoltaic Solar Energy Conference and Exhibition
Event Dates: 25-29 September 2017
Event Location: Amsterdam, The Netherlands
Title of Book: EU PVSEC 2017 – 33rd European PV Solar Energy Conference and Exhibition : proceedings of the international conference
Date: 2017
ISBN: 9783936338478
Subjects:
Freetext Keywords: amorphous silicon, liquid-phase crystallization, multicrystalline silicon
Faculty: E.T.S.I. Industriales (UPM)
Department: Física Aplicada e Ingeniería de Materiales
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

10-um-thick non-hydrogenated amorphous-silicon (a-Si) films were deposited at relatively high rates (_>10 Å/s) by radio-frequency magnetron sputtering (RFMS) on different large-area buffer-layer-coated glass substrates at deposition temperatures ranging from room temperature (RT) to 300oC. These amorphous samples were subsequently crystallized by means of a continuous-wave diode laser, looking for conditions to reach liquid-phase crystallization. The influence of deposition conditions on the quality of the final micro-crystalline silicon films has been studied.

Funding Projects

TypeCodeAcronymLeaderTitle
Government of SpainENE2016-78933-C4UnspecifiedUnspecifiedCELULAS SOLARES DE HETEROUNION DE SILICIO DE ESTRUCTURA NO CONVENCIONAL

More information

Item ID: 50940
DC Identifier: http://oa.upm.es/50940/
OAI Identifier: oai:oa.upm.es:50940
Official URL: http://www.photovoltaic-conference.com/
Deposited by: Memoria Investigacion
Deposited on: 27 Jul 2018 15:30
Last Modified: 30 Jul 2018 15:17
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