Interdigitated laser-contacted solar cell on liquid-phase crystallized silicon on glass

Vetter, Michael and López Rodríguez, Gema and Ortega, Pablo and Martín, Isidro and Andrä, Gudrun and Muñoz Martín, David and Molpeceres Álvarez, Carlos Luis (2017). Interdigitated laser-contacted solar cell on liquid-phase crystallized silicon on glass. In: "33rd European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2017)", 25/09/2017-29/09/2017, Ámsterdam, Países Bajos. ISBN 3-936338-47-7. pp. 827-831. https://doi.org/10.4229/EUPVSEC20172017-2CV.2.19.

Description

Title: Interdigitated laser-contacted solar cell on liquid-phase crystallized silicon on glass
Author/s:
  • Vetter, Michael
  • López Rodríguez, Gema
  • Ortega, Pablo
  • Martín, Isidro
  • Andrä, Gudrun
  • Muñoz Martín, David
  • Molpeceres Álvarez, Carlos Luis
Item Type: Presentation at Congress or Conference (Article)
Event Title: 33rd European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2017)
Event Dates: 25/09/2017-29/09/2017
Event Location: Ámsterdam, Países Bajos
Title of Book: EU PVSEC 2017 Proceedings
Date: 2017
ISBN: 3-936338-47-7
Subjects:
Freetext Keywords: Multi-crystalline silicon; Thin film; Laser crystallization; Laser doping; Carrier lifetime; Quasi steadystate photoconductance; IBC
Faculty: E.T.S.I. Diseño Industrial (UPM)
Department: Ingeniería Mecánica, Química y Diseño Industrial
Creative Commons Licenses: Recognition - No derivative works - Non commercial

Full text

[img]
Preview
PDF - Requires a PDF viewer, such as GSview, Xpdf or Adobe Acrobat Reader
Download (834kB) | Preview

Abstract

10 µm thick liquid-phase crystallized silicon (Si) layers on 3.2 mm Borofloat 33 glass (5cm x 5cm) are fabricated by continuous wave line focus laser (808 nm). A sputtered SiO2/SiON layer stack has been implemented as barrier layer at the glass Si interface. Solar cells with interdigitated back contact are prepared on these multicrystalline layers by using low temperature (<400ºC) Doped-by-Laser (DopLa) fabrication concept. ALDAl2O3/ PECVD amorphous intrinsic Si carbide (SiCx(i)) stack for emitter passivation and a-SiCy(i)/P-doped a- SiCz(n)/a-SiCx(i) stack for base passivation are deposited. With short pulse (ns) UV laser (355 nm) p-type emitter (by Al-diffusion from Al2O3) and point contacts with back surface field (by P-diffusion from a-SiCz(n) layer) are fabricated on n-type mc-Si absorbers layers. Solar cell process steps are monitored by charge carrier lifetime measurements using the quasi steady-state photoconductance method. A strong dependency of charge carrier lifetime on injection level and doping density of absorbers is observed. Higher lifetimes are found for lower absorber doping concentrations. In 0.7 Ωcm LPCSG absorber highest τ eff ≈300 ns corresponding to L eff > 20 µm is found. Laserdoping and contacting using UV laser resulted in small (< 20 mV) loss of Voc(1sun). Crack formation in LPCSG absorbers after laser crystallization process presents technological problems in the preparation of the interdigitated metal contact.

Funding Projects

TypeCodeAcronymLeaderTitle
Horizon 2020657115cSiOnGlassLeibniz Institute für Photonische Technologien E.V.Development of high-quality crystalline silicon layers on glass
Government of SpainENE2016- 78933-C4-1-RUnspecifiedUniversidad Politécnica de CataluñaCélulas solares de heterounión de silicio de estructura no convencional
Government of SpainENE2013-48629-C4-3-RUnspecifiedUniversidad Politécnica de MadridCélulas solares de silicio de lata eficiencia y bajo coste fabricadas a baja temperatura
Government of SpainTEC2014-59736-RUnspecifiedIsidro Martín GarcíaCélulas solares de silicio cristalino con contactos posteriores basadas en el procesado láser de capas dieléctricas
Horizon 2020FKZ 2015 FGR 0078UnspecifiedThüringer AufbaubankUnspecified

More information

Item ID: 50941
DC Identifier: http://oa.upm.es/50941/
OAI Identifier: oai:oa.upm.es:50941
DOI: 10.4229/EUPVSEC20172017-2CV.2.19
Official URL: http://www.eupvsec-proceedings.com/
Deposited by: Memoria Investigacion
Deposited on: 23 May 2018 07:19
Last Modified: 23 May 2018 07:19
  • Logo InvestigaM (UPM)
  • Logo GEOUP4
  • Logo Open Access
  • Open Access
  • Logo Sherpa/Romeo
    Check whether the anglo-saxon journal in which you have published an article allows you to also publish it under open access.
  • Logo Dulcinea
    Check whether the spanish journal in which you have published an article allows you to also publish it under open access.
  • Logo de Recolecta
  • Logo del Observatorio I+D+i UPM
  • Logo de OpenCourseWare UPM