Component integration effects in 4-junction solar cells with dilute nitride 1eV subcell

García Vara, Iván and Ochoa Gómez, Mario and Lombardero Hernández, Iván and Cifuentes Baro, Luis and Caño Fernández, Pablo and Hinojosa Arner, Manuel and Rey Llorente, Ignacio del and Algora del Valle, Carlos and Johnson, A.D. and Davies, J.I. and Tan, K.H. and Loke, W.K. and Wicaksono, S. and Yoon, S.F. (2017). Component integration effects in 4-junction solar cells with dilute nitride 1eV subcell. In: "IEEE 44th Photovoltaic Specialist Conference (PVSC 2017)", 25/06/2017 - 30/06/2017, Washington, DC, USA. pp. 1-5. https://doi.org/10.1109/PVSC.2017.8366250.

Description

Title: Component integration effects in 4-junction solar cells with dilute nitride 1eV subcell
Author/s:
  • García Vara, Iván
  • Ochoa Gómez, Mario
  • Lombardero Hernández, Iván
  • Cifuentes Baro, Luis
  • Caño Fernández, Pablo
  • Hinojosa Arner, Manuel
  • Rey Llorente, Ignacio del
  • Algora del Valle, Carlos
  • Johnson, A.D.
  • Davies, J.I.
  • Tan, K.H.
  • Loke, W.K.
  • Wicaksono, S.
  • Yoon, S.F.
Item Type: Presentation at Congress or Conference (Article)
Event Title: IEEE 44th Photovoltaic Specialist Conference (PVSC 2017)
Event Dates: 25/06/2017 - 30/06/2017
Event Location: Washington, DC, USA
Title of Book: IEEE 44th Photovoltaic Specialist Conference (PVSC 2017)
Date: 2017
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

A GaInP/Ga(In)As/GaNAsSb/Ge 4-junction solar cell grown using combined MOVPE+MBE growth is used to analyze the effects during the integration of the subcell components into the full 4J structure. In this preliminary study, the Ge subcell is observed to suffer about 15% Jsc drop and ~50 mV Voc loss at 1-sun, while the Voc of the GaNAsSb subcell drops by as much as ~ 140 mV. The degradation of the Ge and GaNAsSb subcells in the current-matched 4J structure can hinder its efficiency potential to a higher extent than in the GaInP/Ga(In)As/Ge 3J. Besides, high quality GaNAsSb and Ge subcells would still limit the current and require redesigning the top subcells to achieve optimum efficiencies

Funding Projects

TypeCodeAcronymLeaderTitle
FP7607153LONGESSTIQE plcLow Cost Germanium Substrates for Next Generation 4-Junction Space Solar Cells Utilising Dilute Nitride Technology
Government of SpainTEC2014-54260-C3-1-PUnspecifiedUnspecifiedUnspecified
Madrid Regional GovernmentS2013/MAE-2780UnspecifiedUnspecifiedUnspecified
Government of SpainPCIN-2015-181-C02-02UnspecifiedUnspecifiedUnspecified

More information

Item ID: 50978
DC Identifier: http://oa.upm.es/50978/
OAI Identifier: oai:oa.upm.es:50978
DOI: 10.1109/PVSC.2017.8366250
Official URL: https://ieeexplore.ieee.org/document/8366250
Deposited by: Memoria Investigacion
Deposited on: 10 Apr 2019 15:20
Last Modified: 10 Apr 2019 15:20
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