Assessment of explicit models for different photovoltaic technologies

Pindado Carrion, Santiago and Cubas Cano, Javier and Roibás Millán, Elena and Bugallo Siegel, Francisco J. and Sorribes Palmer, Felix (2018). Assessment of explicit models for different photovoltaic technologies. "Energies", v. 11 (n. 6); p. 1353. ISSN 1996-1073. https://doi.org/10.3390/en11061353.

Description

Title: Assessment of explicit models for different photovoltaic technologies
Author/s:
  • Pindado Carrion, Santiago
  • Cubas Cano, Javier
  • Roibás Millán, Elena
  • Bugallo Siegel, Francisco J.
  • Sorribes Palmer, Felix
Item Type: Article
Título de Revista/Publicación: Energies
Date: May 2018
ISSN: 1996-1073
Volume: 11
Subjects:
Freetext Keywords: Solar cell; solar panel; photovoltaic modeling; explicit equation; parameter extraction; plastic solar cell.
Faculty: Instituto de Microgravedad Ignacio Da Riva (UPM)
Department: Sistemas Aeroespaciales, Transporte Aéreo y Aeropuertos
UPM's Research Group: Desarrollo y Ensayos Aeroespaciales DEA
Creative Commons Licenses: Recognition - No derivative works

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Abstract

Accurate and simple mathematical models are usually required to assess the performances of photovoltaic devices. In particular, it is common practice to use explicit models to evaluate the current–voltage (I–V) performance curves, mainly based on simple analytical expressions that enable the parameters determination with a little computational effort. Six different explicit photovoltaic models (i.e., explicit I–V equations) by different authors (Akbaba & Alattawi; El-Tayyan; Karmalkar & Haneefa; Das/Saetre et al.; Das; and Pindado & Cubas) are analyzed and compared. This comparison is carried out by fitting these models to eight I–V curves for different technologies, including Si, Si polycrystalline, Ga–As, and plastic solar cells. The accuracy of each model depends on the photovoltaic technology to which it is applied. The best fit to each I–V curve studied is normally obtained with a different model, with an average deviation under 2% in terms of short-circuit current (normalized RMSE). In general, the model proposed by Karmalkar & Haneefa shows the highest level of accuracy, and is a good fit for all I–V curves studied.

More information

Item ID: 51122
DC Identifier: http://oa.upm.es/51122/
OAI Identifier: oai:oa.upm.es:51122
DOI: 10.3390/en11061353
Official URL: http://www.mdpi.com/1996-1073/11/6/1353
Deposited by: Biblioteca ETSI Aeronauticos
Deposited on: 30 May 2018 12:17
Last Modified: 30 May 2018 12:17
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