Simulation Model for High Power Tapered Semiconductor Optical Amplifiers

García Tijero, José Manuel and Esquivias Moscardo, Ignacio and Pozo, Gonzalo del (2017). Simulation Model for High Power Tapered Semiconductor Optical Amplifiers. In: "X Reunion Española de Optoelectrónica, OPTOEL2017", 12-14 julio, Santiago de Compostela. pp. 1-4.

Description

Title: Simulation Model for High Power Tapered Semiconductor Optical Amplifiers
Author/s:
  • García Tijero, José Manuel
  • Esquivias Moscardo, Ignacio
  • Pozo, Gonzalo del
Item Type: Presentation at Congress or Conference (Article)
Event Title: X Reunion Española de Optoelectrónica, OPTOEL2017
Event Dates: 12-14 julio
Event Location: Santiago de Compostela
Title of Book: 10 ª Reunión Españo la de Optoelectrónica, OPTOEL17
Date: 2017
Subjects:
Freetext Keywords: SOA; semiconductor optical amplifier; simulation model; tapered SOA
Faculty: E.T.S. Arquitectura (UPM)
Department: Estructuras y Física de Edificación
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

We present a quasi-3D steady state numerical simulation model for high power tapered Semiconductor Optical Amplifiers. The software self-consistently solves the steady state partial differential equations describing the electric, thermal and optical behavior of these devices. The capabilities of the model are illustrated by showing how the simulation of a test device accounts for the mutual dependence of the carrier and photon densities as a result of the carrier and temperature dependence of the refractive index. Both, carrier and thermal lensing effects are shown to appear at high injection levels.

More information

Item ID: 52501
DC Identifier: http://oa.upm.es/52501/
OAI Identifier: oai:oa.upm.es:52501
Deposited by: Memoria Investigacion
Deposited on: 05 Oct 2018 07:11
Last Modified: 07 May 2020 07:08
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