Wafer-Bonded AlGaAs//Si Dual-Junction Solar Cells

Veinberg Vidal, Elias and Vauche, Laura and Weick, Clement and Da Fonseca, Jérémy and Jany, Christophe and Morales, Christophe and Lecouvey, Christophe and Desrues, Thibaut and Voarino, Philippe and Fournel, Frank and Kaminski-Cachopo, Anne and Datas Medina, Alejandro and García-Linares Fontes, Pablo and Baudrit, Mathieu and Mur, Pierre and Dupré, Cecilia (2017). Wafer-Bonded AlGaAs//Si Dual-Junction Solar Cells. In: "44th Photovoltaic Specialist Conference (PVSC 2017)", 25/06/2017-30/06/2017, Washington, DC, Estados Unidos. ISBN 978-1-5090-5605-7. pp. 2562-2565. https://doi.org/10.1109/PVSC.2017.8366116.

Description

Title: Wafer-Bonded AlGaAs//Si Dual-Junction Solar Cells
Author/s:
  • Veinberg Vidal, Elias
  • Vauche, Laura
  • Weick, Clement
  • Da Fonseca, Jérémy
  • Jany, Christophe
  • Morales, Christophe
  • Lecouvey, Christophe
  • Desrues, Thibaut
  • Voarino, Philippe
  • Fournel, Frank
  • Kaminski-Cachopo, Anne
  • Datas Medina, Alejandro
  • García-Linares Fontes, Pablo
  • Baudrit, Mathieu
  • Mur, Pierre
  • Dupré, Cecilia
Item Type: Presentation at Congress or Conference (Article)
Event Title: 44th Photovoltaic Specialist Conference (PVSC 2017)
Event Dates: 25/06/2017-30/06/2017
Event Location: Washington, DC, Estados Unidos
Title of Book: 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)
Date: 2017
ISBN: 978-1-5090-5605-7
Subjects:
Freetext Keywords: Photovoltaic solar cells; Multijunction; III-V on silicon; Surface-activated direct wafer bonding
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

Full text

[img]
Preview
PDF - Requires a PDF viewer, such as GSview, Xpdf or Adobe Acrobat Reader
Download (508kB) | Preview

Abstract

Monolithic two-terminal III-V on Si dual-junction (2J) solar cells were fabricated by means of Surface-Activated direct wafer Bonding (SAB). Al0.2Ga0.8As single-junction cells are grown on GaAs substrate by Metal-Organic Vapor Phase Epitaxy (MOVPE) and bonded at room temperature to independently fabricated Si solar cells. The n+-GaAs//n+-Si bonding interface is characterized by Transmission Electron Microscopy (TEM) revealing a 2-3 nm thick amorphous interlayer. The performance of the 1 cm² tandem cells, designed for low concentration applications, was studied by External Quantum Efficiency (EQE) and J-V measurements showing a power conversion efficiency of 17% under one-sun AM1.5G spectrum. To our knowledge, this is the highest efficiency ever reported for a wafer-bonded 2J III-V on Si solar cell. Limitations to performance have been identified and therefore higher efficiencies are expected.

More information

Item ID: 53628
DC Identifier: http://oa.upm.es/53628/
OAI Identifier: oai:oa.upm.es:53628
DOI: 10.1109/PVSC.2017.8366116
Official URL: http://www.ieee-pvsc.org/PVSC44/
Deposited by: Memoria Investigacion
Deposited on: 16 Jan 2019 10:33
Last Modified: 12 Mar 2019 09:45
  • Logo InvestigaM (UPM)
  • Logo GEOUP4
  • Logo Open Access
  • Open Access
  • Logo Sherpa/Romeo
    Check whether the anglo-saxon journal in which you have published an article allows you to also publish it under open access.
  • Logo Dulcinea
    Check whether the spanish journal in which you have published an article allows you to also publish it under open access.
  • Logo de Recolecta
  • Logo del Observatorio I+D+i UPM
  • Logo de OpenCourseWare UPM