Substrate texturing for homogeneous deposition of tilted c-axis AlN films for shear mode operation

Sierra Zapata, M. and Clement Lorenzo, Marta and Mirea, Teona and Olivares Roza, Jimena and Iborra Grau, Enrique (2017). Substrate texturing for homogeneous deposition of tilted c-axis AlN films for shear mode operation. In: "Proceedings of the 2017 Joint Conference of the European-Frequency-and-Time-Forum / IEEE International Frequency Control Symposium (EFTF/IFCS)", 09/07/2017 - 13/07/2017, Besancon, France. pp. 1-4. https://doi.org/10.1109/FCS.2017.8088957.

Description

Title: Substrate texturing for homogeneous deposition of tilted c-axis AlN films for shear mode operation
Author/s:
  • Sierra Zapata, M.
  • Clement Lorenzo, Marta
  • Mirea, Teona
  • Olivares Roza, Jimena
  • Iborra Grau, Enrique
Item Type: Presentation at Congress or Conference (Article)
Event Title: Proceedings of the 2017 Joint Conference of the European-Frequency-and-Time-Forum / IEEE International Frequency Control Symposium (EFTF/IFCS)
Event Dates: 09/07/2017 - 13/07/2017
Event Location: Besancon, France
Title of Book: 2017 Joint Conference of the European Frequency and Time Forum and IEEE International Frequency Control Symposium (EFTF/IFCS)
Date: 2017
Subjects:
Freetext Keywords: BAW resonators; shear mode resonator; tilted grains AlN
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

We propose two methods to improve the growth process of AlN films displaying the c-axis uniformly tilted, intended for the excitation of shear modes in acoustic resonators. The two methods aim at modifying the surface topography of the substrates in order to produce a family of parallel planes offering a suitable orientation for the subsequent growth of uniformly tilted AlN microcrystals. The first method is based on an ion milling process over rough substrates. Rough substrates, obtained by depositing a W layer on sputtered porous silicon oxide layers, are bombarded with a wide beam of Ar ions impinging on the sample surface at an angle of 65º. All treated surfaces lead to increased mean tilt angles of the subsequently grown AlN films, which in turn improves the coupling factor of the shear mode resonators. The second method consists in transferring the topography of a blazed diffraction grating to a photoresist layer spun over metal substrates. The photoresist pattern is then transferred to the substrates by a non- selective directional reactive ion etching process with SF6.

Funding Projects

TypeCodeAcronymLeaderTitle
Government of SpainMAT2013-45957-RUnspecifiedUnspecifiedMateriales avanzados para biosensores basados en resonadores piezoeléctricos combinados con nanotubos de carbono y grafeno

More information

Item ID: 54007
DC Identifier: http://oa.upm.es/54007/
OAI Identifier: oai:oa.upm.es:54007
DOI: 10.1109/FCS.2017.8088957
Official URL: https://ieeexplore.ieee.org/document/8088957
Deposited by: Memoria Investigacion
Deposited on: 04 Mar 2019 16:57
Last Modified: 04 Mar 2019 16:57
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