A deep insight into the electronic properties of CIGS modules with monolithic interconnects based on 2D simulations with TCAD

Vidal Lorbada, Ricardo and Walter, Thomas and Fuertes Marrón, David and Lavrenko, Tetiana and Muecke, Dennis (2019). A deep insight into the electronic properties of CIGS modules with monolithic interconnects based on 2D simulations with TCAD. "Coatings", v. 9 (n. 2); pp.. ISSN 2079-6412. https://doi.org/10.3390/coatings9020128.

Description

Title: A deep insight into the electronic properties of CIGS modules with monolithic interconnects based on 2D simulations with TCAD
Author/s:
  • Vidal Lorbada, Ricardo
  • Walter, Thomas
  • Fuertes Marrón, David
  • Lavrenko, Tetiana
  • Muecke, Dennis
Item Type: Article
Título de Revista/Publicación: Coatings
Date: 19 February 2019
ISSN: 2079-6412
Volume: 9
Subjects:
Freetext Keywords: Cu(In,Ga)Se2; mini-module; numerical simulation; P1 shunt; space charge region (SCR); TCAD; transistor effect
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Electrónica Física
UPM's Research Group: Silicio y Nuevos Conceptos para Células Solares
Creative Commons Licenses: Recognition - Non commercial - Share

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Abstract

The aim of this work is to provide an insight into the impact of the P1 shunt on the performance of ZnO/CdS/Cu(In,Ga)Se2/Mo modules with monolithic interconnects. The P1 scribe is a pattern that separates the back contact of two adjacent cells and is filled with Cu(In,Ga)Se2 (CIGS). This scribe introduces a shunt that can affect significantly the behavior of the device, especially under weak light conditions. Based on 2D numerical simulations performed with TCAD, we postulate a mechanism that affects the current flow through the P1 shunt. This mechanism is similar to that of a junction field effect transistor device with a p-type channel, in which the current flow can be modulated by varying the thickness of the channel and the doping concentration. The results of these simulations suggest that expanding the space charge region (SCR) into P1 reduces the shunt conductance in this path significantly, thus decreasing the current flow through it. The presented simulations demonstrate that two fabrication parameters have a direct influence on the extension of the SCR, which are the thickness of the absorber layer and its acceptor concentration.

Funding Projects

TypeCodeAcronymLeaderTitle
Unspecified0324070proCIGSUnspecifiedUnspecified

More information

Item ID: 54068
DC Identifier: http://oa.upm.es/54068/
OAI Identifier: oai:oa.upm.es:54068
DOI: 10.3390/coatings9020128
Official URL: https://www.mdpi.com/2079-6412/9/2/128
Deposited by: Dr. David Fuertes Marrón
Deposited on: 21 Feb 2019 10:41
Last Modified: 21 Feb 2019 10:41
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