A substrate removal processing method for III-V solar cells compatible with low-temperature characterization

Villa Morales, Juan and Ramiro Gonzalez, Iñigo and Ripalda Cobián, Jose María and Antolín Fernández, Elisa and García Vara, Iván and Martí Vega, Antonio (2017). A substrate removal processing method for III-V solar cells compatible with low-temperature characterization. "Materials Science in Semiconductor Processing", v. 63 ; pp. 58-63. ISSN 1369-8001. https://doi.org/10.1016/j.mssp.2017.02.003.

Description

Title: A substrate removal processing method for III-V solar cells compatible with low-temperature characterization
Author/s:
  • Villa Morales, Juan
  • Ramiro Gonzalez, Iñigo
  • Ripalda Cobián, Jose María
  • Antolín Fernández, Elisa
  • García Vara, Iván
  • Martí Vega, Antonio
Item Type: Article
Título de Revista/Publicación: Materials Science in Semiconductor Processing
Date: June 2017
ISSN: 1369-8001
Volume: 63
Subjects:
Freetext Keywords: Thin film, Substrate removal, Low temperature, Concentrator solar cells, III-semiconductors
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Electrónica Física
UPM's Research Group: Silicio y Nuevos Conceptos para Células Solares / Semiconductores III-V
Creative Commons Licenses: None

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Abstract

In this work, we present a substrate removal procedure for solar cells compatible with direct attachment of the epitaxy to a holder through a thermally and electrically conductive interface. In our case this procedure was motivated by the need to develop a processing technique compatible with low-temperature characterization of the devices. The method is based on the use of indium to bond a thin-film epitaxial structure to a silicon support. The adequate properties of indium, namely, low tensile strength and good thermal and electrical conductivity, allow characterizing the devices at very low temperatures without causing strain-induced degradation in the samples. Following this method, we have fabricated and characterized thin-film (1.74 µm) AlGaAs solar cells with and without a layer of InAs quantum dots. We show the adequacy of our method to measure at low temperatures by means of measuring the photocurrent or quantum efficiency of the devices at different temperatures, ranging from 300 K to 20 K.

Funding Projects

TypeCodeAcronymLeaderTitle
Madrid Regional GovernmentS2013/MAE-2780MADRID-PVAntonio MartíUnspecified
Government of SpainTEC2015-64189-C3-1-RINVENTA-PVAntonio MartíUnspecified
Government of SpainRTC-2015–3469-3POWERLEOCarlos AlgoraUnspecified
Government of SpainBES-2013–066463UnspecifiedUnspecifiedUnspecified

More information

Item ID: 54142
DC Identifier: http://oa.upm.es/54142/
OAI Identifier: oai:oa.upm.es:54142
DOI: 10.1016/j.mssp.2017.02.003
Official URL: https://www.sciencedirect.com/science/article/pii/S1369800117303256?via%3Dihub
Deposited by: Prof. Antonio Martí Vega
Deposited on: 28 Feb 2019 11:29
Last Modified: 01 Jul 2019 22:30
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