Novel heterojunction bipolar transistor architectures for the practical implementation of high-efficiency three-terminal solar cells

García-Linares Fontes, Pablo and Antolin Fernández, Elisa and Martí Vega, Antonio (2019). Novel heterojunction bipolar transistor architectures for the practical implementation of high-efficiency three-terminal solar cells. "Solar Energy Materials and Solar Cells", v. 194 ; pp. 54-61. ISSN 0927-0248. https://doi.org/10.1016/j.solmat.2019.01.027.

Description

Title: Novel heterojunction bipolar transistor architectures for the practical implementation of high-efficiency three-terminal solar cells
Author/s:
  • García-Linares Fontes, Pablo
  • Antolin Fernández, Elisa
  • Martí Vega, Antonio
Item Type: Article
Título de Revista/Publicación: Solar Energy Materials and Solar Cells
Date: 1 June 2019
ISSN: 0927-0248
Volume: 194
Subjects:
Freetext Keywords: Photovoltaics, electronics, multijunction solar cells, three-terminal, bipolar junction transistor
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Electrónica Física, Ingeniería Eléctrica y Física Aplicada
UPM's Research Group: Silicio y Nuevos Conceptos para Células Solares
Creative Commons Licenses: None

Full text

[img]
Preview
PDF - Requires a PDF viewer, such as GSview, Xpdf or Adobe Acrobat Reader
Download (74kB) | Preview

Abstract

Practical device architectures are proposed here for the implementation of three-terminal heterojunction bipolar transistor solar cells (3T-HBTSCs). These photovoltaic devices, which have a potential efficiency similar to that of multijunction cells, exhibit reduced spectral sensitivity compared with monolithically and series-connected tandem solar cells. In addition, the simplified n-p-n (or p-np) structure does not require the use of tunnel junctions. In this framework, four architectures are proposed and discussed in this paper: 1) one in which the top cell is based on silicon and the bottom cell is based on a heterojunction between silicon and III-V nanomaterials; 2) one in which the top cell is made of amorphous silicon and the bottom cell is made of an amorphous silicon-silicon heterojunction; 3) one based on the use of III-V semiconductors aimed at space applications; and 4) one in which the top cell is based on a perovskite material and the bottom cell is made of a perovskitesilicon heterostructure.

Funding Projects

TypeCodeAcronymLeaderTitle
Madrid Regional Government2013/MAE-2780MADRID-PVUnspecifiedUnspecified
Government of SpainTEC2015-64189-C3-1INVENTA-PVUnspecifiedUnspecified
Horizon 2020787289GRECOUnspecifiedFostering a Next Generation of European Photovoltaic Society through Open Science
Government of SpainRYC-2015-18539UnspecifiedUnspecifiedUnspecified

More information

Item ID: 54882
DC Identifier: http://oa.upm.es/54882/
OAI Identifier: oai:oa.upm.es:54882
DOI: 10.1016/j.solmat.2019.01.027
Official URL: https://doi.org/10.1016/j.solmat.2019.01.027
Deposited by: Prof. Antonio Martí Vega
Deposited on: 06 May 2019 13:23
Last Modified: 31 Jul 2020 22:30
  • Logo InvestigaM (UPM)
  • Logo GEOUP4
  • Logo Open Access
  • Open Access
  • Logo Sherpa/Romeo
    Check whether the anglo-saxon journal in which you have published an article allows you to also publish it under open access.
  • Logo Dulcinea
    Check whether the spanish journal in which you have published an article allows you to also publish it under open access.
  • Logo de Recolecta
  • Logo del Observatorio I+D+i UPM
  • Logo de OpenCourseWare UPM