Effects of Post-Deposition Vacuum Annealing on the Piezoelectric Properties of AlScN Thin Films Sputtered on 200 Mm Production Wafers

Clement Lorenzo, Marta and Felmetsger, Valeriy and Mirea, Teona and Olivares Roza, Jimena and Iborra Grau, Enrique (2018). Effects of Post-Deposition Vacuum Annealing on the Piezoelectric Properties of AlScN Thin Films Sputtered on 200 Mm Production Wafers. In: "IEEE International Ultrasonics Symposium (IUS 2018)", 22/10/2018 - 25/10/2018, Kobe, Japan. pp. 1-4. https://doi.org/10.1109/ULTSYM.2018.8580177.

Description

Title: Effects of Post-Deposition Vacuum Annealing on the Piezoelectric Properties of AlScN Thin Films Sputtered on 200 Mm Production Wafers
Author/s:
  • Clement Lorenzo, Marta
  • Felmetsger, Valeriy
  • Mirea, Teona
  • Olivares Roza, Jimena
  • Iborra Grau, Enrique
Item Type: Presentation at Congress or Conference (Article)
Event Title: IEEE International Ultrasonics Symposium (IUS 2018)
Event Dates: 22/10/2018 - 25/10/2018
Event Location: Kobe, Japan
Title of Book: IEEE International Ultrasonics Symposium (IUS 2018)
Título de Revista/Publicación: IEEE International Ultrasonics Symposium (IUS 2018)
Date: 2018
ISSN: 1051-0117
Subjects:
Freetext Keywords: AIScN films; Sc-doped AIN; reactive magnetrón sputtering; 200 mm silicon substrates; variation ofSc content
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Sc-doped AlN polycrystalline films are attractive active layers for high frequency (GHz range) acoustic resonators owing to the significant rise in the material piezoelectric activity with the increasing Sc content. AlScN films are sputtered on 200 mm Si wafers using configurable cathode containing a variable number of embedded Sc pellets which allows controlling both the Sc content in the films and the composition homogeneity across the wafer. The method is implemented in an Endeavor-AT? cluster tool from OEM Group adapted for sputtering on 200 mm wafers. The piezoelectric activity of the as-deposited AlScN films appears to improve after a 15-minute post-deposition annealing at 600ºC, leading to a 20% increase in the electromechanical coupling factor.

More information

Item ID: 55073
DC Identifier: http://oa.upm.es/55073/
OAI Identifier: oai:oa.upm.es:55073
DOI: 10.1109/ULTSYM.2018.8580177
Official URL: https://ieeexplore.ieee.org/document/8580177
Deposited by: Memoria Investigacion
Deposited on: 27 May 2019 15:21
Last Modified: 27 May 2019 15:21
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