Type-II GaAsSb/GaAsN superlattice solar cells

Gonzalo, A. and Utrilla Lomas, Antonio David and Aeberhard, Urs and Llorens, J.M. and Alén Millán, Benito and Fuertes Marrón, David and Guzmán, A. and Hierro, A. and Ulloa Herrero, José María (2018). Type-II GaAsSb/GaAsN superlattice solar cells. In: "SPIE OPTO", 27/01/2018 - 01/02/2018, San Francisco, California,EE.UU. pp. 1052701-1052709. https://doi.org/10.1117/12.2290079.

Description

Title: Type-II GaAsSb/GaAsN superlattice solar cells
Author/s:
  • Gonzalo, A.
  • Utrilla Lomas, Antonio David
  • Aeberhard, Urs
  • Llorens, J.M.
  • Alén Millán, Benito
  • Fuertes Marrón, David
  • Guzmán, A.
  • Hierro, A.
  • Ulloa Herrero, José María
Item Type: Presentation at Congress or Conference (Article)
Event Title: SPIE OPTO
Event Dates: 27/01/2018 - 01/02/2018
Event Location: San Francisco, California,EE.UU
Title of Book: Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VII
Date: February 2018
Volume: 10527
Subjects:
Freetext Keywords: Type-II superlattice; multi-junction solar cell; carrier lifetime tunability; extraction efficiency
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Dilute nitride GaAsSbN is an ideal candidate to form the 1-1.15 eV lattice-matched sub-cell that would significantly enhance the performance of 3- and 4-junction solar cells. However, growth problems inherent to this quaternary alloy lead typically to a poor crystal quality that limits its applicability. Better compositional control and crystal quality have been recently reported by growing the material as a GaAsSb/GaAsN superlattice, because of the spatial separation of Sb and N that avoid miscibility problems. Moreover, these structures provide bandgap tunability trough period thickness. Here we study the performance of lattice-matched 1.15 eV GaAsSb/GaAsN type-II perlattice p-i-n junction solar cells with different period thickness and compare them with the bulk and GaAsSbN/GaAs type-I superlattice counterparts. We demonstrate carrier lifetime tunability through the period thickness in the type-II structures. However, the long carrier lifetimes achievable with periods thicker than 12 nm are incompatible with a high carrier extraction efficiency under short-circuit conditions. Only superlattices with thinner periods and short carrier lifetimes show good solar cell performance. Quantum kinetic calculations based on the non-equilibrium Green's function (NEGF) formalism predict a change in transport regime from direct tunneling extraction to sequential tunneling with sizable thermionic emission components when passing from 6 nm to 12 nm period length, which for low carrier lifetime results in a decrease of extraction efficiency by more than 30%.

Funding Projects

TypeCodeAcronymLeaderTitle
Madrid Regional GovernmentS2013/MAE-2780MADRID-PVUnspecifiedMateriales, dispositivos y tecnología para el desarrollo de la industria fotovoltaica
Government of SpainMAT2016-77491-C2-1-RUnspecifiedUnspecifiedNuevas nanoestructuras basadas en SB para aplicaciones fotovoltaicas de alta eficiencia

More information

Item ID: 55124
DC Identifier: http://oa.upm.es/55124/
OAI Identifier: oai:oa.upm.es:55124
DOI: 10.1117/12.2290079
Official URL: https://doi.org/10.1117/12.2290079
Deposited by: Memoria Investigacion
Deposited on: 25 Jun 2019 16:17
Last Modified: 26 Jun 2019 06:46
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