Ge virtual substrates for high efficiency III-V solar cells: applications, potential and challenges

García Vara, Ivan and Hinojosa Arner, Manuel and Lombardero Hernández, Ivan and Rey-Stolle Prado, Ignacio and Algora del Valle, Carlos and Nguyen, Huy and Edwards, Stuart and Morgan, Aled and Johnson, Andrew (2019). Ge virtual substrates for high efficiency III-V solar cells: applications, potential and challenges. In: "46th IEEE PVSC (2019)", 16-21 Junio, 2019, Chicago (IL, USA).

Description

Title: Ge virtual substrates for high efficiency III-V solar cells: applications, potential and challenges
Author/s:
  • García Vara, Ivan
  • Hinojosa Arner, Manuel
  • Lombardero Hernández, Ivan
  • Rey-Stolle Prado, Ignacio
  • Algora del Valle, Carlos
  • Nguyen, Huy
  • Edwards, Stuart
  • Morgan, Aled
  • Johnson, Andrew
Item Type: Presentation at Congress or Conference (Article)
Event Title: 46th IEEE PVSC (2019)
Event Dates: 16-21 Junio, 2019
Event Location: Chicago (IL, USA)
Title of Book: Proceedings IEEE PVSC 2019
Date: June 2019
Subjects:
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Electrónica Física, Ingeniería Eléctrica y Física Aplicada
Creative Commons Licenses: None

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Abstract

Virtual substrates based on thin Ge layers on Si by direct deposition have achieved high quality recently. Their application to high efficiency III-V solar cells is analyzed in this work. Replacing traditional Ge substrates with Ge/Si virtual substrates in standard lattice-matched and upright metamorphic GaInP/Ga(In)As/Ge solar cells is feasible according to our calculations using realistic parameters of state-of-the-art Ge solar cells but with thin bases (< 5um). The first experimental steps are tackled by implementing Ge single-junction and full GaInP/Ga(In)As/Ge triple-junction solar cells on medium quality Ge/Si virtual substrates with 5um thick Ge layers. The results show that the photocurrent in the Ge bottom cell is barely enough to achieve current matching with the upper subcells, but the overall performance is poor due to low voltages in the junctions. Moreover, observed cracks in the triple-junction structure point to the need to reduce the thickness of the Ge + III-V structure or using other advanced approaches to mitigate the thermal expansion coefficient mismatch effects, such as using embedded porous silicon. Next experimental work will pursue this objective and use more advanced Ge/Si virtual substrates available with lower threading dislocation densities and different Ge thicknesses

Funding Projects

TypeCodeAcronymLeaderTitle
Madrid Regional GovernmentS2018/EMT-4308UnspecifiedUnspecifiedUnspecified
Government of SpainTEC2015-66722-RUnspecifiedUnspecifiedCELULAS TANDEM III-V/SI: HACIA UNA TECNOLOGIA FOTOVOLTAICA DE PANEL PLANO CON CELULAS MULTIUNION
Government of SpainRTI2018-094291-B-I00UnspecifiedUnspecifiedCELULAS SOLARES MULTIUNION SOBRE SILICIO MEDIANTE SUBSTRATOS VIRTUALES DE NUEVA GENERACION Y CRECIMIENTO MOVPE METAMORFICO

More information

Item ID: 56380
DC Identifier: http://oa.upm.es/56380/
OAI Identifier: oai:oa.upm.es:56380
Deposited by: Dr. Iván García Vara
Deposited on: 11 Sep 2019 08:17
Last Modified: 11 Sep 2019 08:19
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