Considerations for the design of a heterojunction bipolar transistor solar cell

Antolín Fernández, Elisa and Zehender, Marius and García-Linares Fontes, Pablo and Svatek, Simon and Martí Vega, Antonio (2019). Considerations for the design of a heterojunction bipolar transistor solar cell. "IEEE Journal of Photovoltaics" ; pp. 1-6. ISSN 2156-3381. https://doi.org/10.1109/JPHOTOV.2019.2945914.

Description

Title: Considerations for the design of a heterojunction bipolar transistor solar cell
Author/s:
  • Antolín Fernández, Elisa
  • Zehender, Marius
  • García-Linares Fontes, Pablo
  • Svatek, Simon
  • Martí Vega, Antonio
Item Type: Article
Título de Revista/Publicación: IEEE Journal of Photovoltaics
Date: 2019
ISSN: 2156-3381
Subjects:
Freetext Keywords: Drift-diffusion model, heterojunction bipolar transistor solar cell, multijunction solar cell, novel photovoltaic concept.
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Electrónica Física, Ingeniería Eléctrica y Física Aplicada
UPM's Research Group: Silicio y Nuevos Conceptos para Células Solares
Creative Commons Licenses: None

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Abstract

Independent current extraction in multijunction solar cells has gained attention in recent years because it can deliver higher annual energy yield and can work for more semiconductor material combinations than the more established series-connected multijunction technology. The heterojunction bipolar transistor solar cell concept (HBTSC) was recently proposed as a simple, compact, and cost-effective multiterminal device structure that allows independent current extraction. It consists of only three main layers: emitter, base, and collector. In this article, we use a drift-diffusion model to analyze important aspects in the design of an HBTSC structure based on typical III-V semiconductor materials. We find that carrier injection from the emitter into the collector (transistor effect) degrades the open-circuit voltage of the top sub-cell, but this risk can be eliminated by optimizing the base design. We find requirements for the base layer which are, in principle, achievable in the context of current III-V semiconductor technology.

Funding Projects

TypeCodeAcronymLeaderTitle
Horizon 2020787289GRECOUnspecifiedUnspecified
Government of SpainTEC2015- 64189-C3-1-RINVENTA-PVUnspecifiedUnspecified

More information

Item ID: 57084
DC Identifier: http://oa.upm.es/57084/
OAI Identifier: oai:oa.upm.es:57084
DOI: 10.1109/JPHOTOV.2019.2945914
Official URL: https://ieeexplore.ieee.org/document/8880478
Deposited by: Prof. Antonio Martí Vega
Deposited on: 28 Oct 2019 06:47
Last Modified: 28 Oct 2019 06:47
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