Analysis of metallic intermediate-band formation in photovoltaic materials

Tablero Crespo, César and Wahnón Benarroch, Perla (2003). Analysis of metallic intermediate-band formation in photovoltaic materials. "Applied Physics Letters", v. 82 (n. 1); pp. 151-153. ISSN 0003-6951. https://doi.org/10.1063/1.1535744.

Description

Title: Analysis of metallic intermediate-band formation in photovoltaic materials
Author/s:
  • Tablero Crespo, César
  • Wahnón Benarroch, Perla
Item Type: Article
Título de Revista/Publicación: Applied Physics Letters
Date: 2003
ISSN: 0003-6951
Volume: 82
Subjects:
Freetext Keywords: Intermediate-band formation; photovoltaic materials
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Tecnología Fotónica y Bioingeniería
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The substitution of some transition atoms in III–V-type semiconductors may give rise to a type of high-efficiency photovoltaic material with an isolated intermediate narrow band in the middle of the band gap, capable of absorbing photons of low energies. We have carried out a comparative analysis of the nature and possibility of formation of the intermediate band in two compounds Ga 4 P 3 Ti Ga4P3Ti and Ga 3 P 4 Ti Ga3P4Ti in terms of density of states, electronic density, and atomic and orbital populations. We found that the intermediate band is formed only in one of these compounds.

Funding Projects

TypeCodeAcronymLeaderTitle
Government of SpainTIC20000-1339-C02-02UnspecifiedUnspecifiedUnspecified

More information

Item ID: 61430
DC Identifier: http://oa.upm.es/61430/
OAI Identifier: oai:oa.upm.es:61430
DOI: 10.1063/1.1535744
Official URL: https://aip.scitation.org/doi/10.1063/1.1535744
Deposited by: Biblioteca ETSI Telecomunicación
Deposited on: 18 Mar 2020 15:46
Last Modified: 18 Mar 2020 15:46
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