Active materials based on implanted Si for obtaining intermediate band solar cells

Sánchez Noriega, Kefrén and Aguilera Bonet, Irene and Palacios Clemente, Pablo and Wahnón Benarroch, Perla (2010). Active materials based on implanted Si for obtaining intermediate band solar cells. "Advances in Science and Technology", v. 74 ; pp. 151-156. ISSN 1662-8969. https://doi.org/10.4028/www.scientific.net/AST.74.151.

Description

Title: Active materials based on implanted Si for obtaining intermediate band solar cells
Author/s:
  • Sánchez Noriega, Kefrén
  • Aguilera Bonet, Irene
  • Palacios Clemente, Pablo
  • Wahnón Benarroch, Perla
Item Type: Article
Título de Revista/Publicación: Advances in Science and Technology
Date: 2010
ISSN: 1662-8969
Volume: 74
Subjects:
Freetext Keywords: Intermediate band, photovoltaic materials, first-principles calculations, Si
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

First-principles calculations carried out for compounds based on Si implanted with different species, as Ti or chalcogens (S, Se, Te), show them as solid candidates to intermediate band (IB) photovoltaic materials. This DFT study predicts electronic structures, formation energies, relaxed atomic structures, optoelectronic properties,diffusion paths, for supercells containing up to several hundreds of atoms. The knowledge of Si-based devices is a relevant factor to facilitate the creation of an IB solar cell. Crystalline samples with a concentration of Ti several orders of magnitude above the solubility limit have been already grown. Formation energy calculations agree with the experiment in showing mainly interstitial implantation. Calculated electronic structure presents an IB, which is in agreement with electrical measurements and models, and is expected to cause an increase of the absorption coefficient across the solar spectrum. Chalcogen-implanted Si is an efficient IR absorber when implantation is carried out at ultra-high concentrations. Substitutional implantation produces a filled band inside Si band-gap and our calculations predict that plausible co-doping with IIIA atoms (as Al, B) would allow to obtain an IB fulfilling all the needed requirements.

Funding Projects

TypeCodeAcronymLeaderTitle
Government of SpainCSD2006-0004GENESIS FVUnspecifiedUnspecified
Government of SpainMAT2009-14625-C03-01FOTOMATUnspecifiedUnspecified
Madrid Regional GovernmentS2009/ENE1477NUMANCIA 2UnspecifiedUnspecified

More information

Item ID: 62348
DC Identifier: http://oa.upm.es/62348/
OAI Identifier: oai:oa.upm.es:62348
DOI: 10.4028/www.scientific.net/AST.74.151
Official URL: https://www.scientific.net/AST.74.151
Deposited by: Biblioteca ETSI Telecomunicación
Deposited on: 25 Mar 2020 07:19
Last Modified: 25 Mar 2020 07:19
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