Transition Metal-Hyperdoped InP Semiconductors as Efficient Solar Absorber Materials

García Moreno, Gregorio and Sánchez-Palencia Vallejo, Pablo and Palacios Clemente, Pablo and Wahnón Benarroch, Perla (2020). Transition Metal-Hyperdoped InP Semiconductors as Efficient Solar Absorber Materials. "Nanomaterials", v. 10 (n. 2); pp.. ISSN 2079-4991. https://doi.org/10.3390/nano10020283.

Description

Title: Transition Metal-Hyperdoped InP Semiconductors as Efficient Solar Absorber Materials
Author/s:
  • García Moreno, Gregorio
  • Sánchez-Palencia Vallejo, Pablo
  • Palacios Clemente, Pablo
  • Wahnón Benarroch, Perla
Item Type: Article
Título de Revista/Publicación: Nanomaterials
Date: 2020
ISSN: 2079-4991
Volume: 10
Subjects:
Freetext Keywords: Transition metal-hyperdoped; InP; photovoltaic; DFT; GW; in-gap band
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Tecnología Fotónica y Bioingeniería
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

This work explores the possibility of increasing the photovoltaic efficiency of InP semiconductors through a hyperdoping process with transition metals (TM = Ti, V, Cr, Mn). To this end, we investigated the crystal structure, electronic band and optical absorption features of TM-hyperdoped InP (TM@InP), with the formula TMxIn1-xP (x = 0.03), by using accurate ab initio electronic structure calculations. The analysis of the electronic structure shows that TM 3d-orbitals induce new states in the host semiconductor bandgap, leading to improved absorption features that cover the whole range of the sunlight spectrum. The best results are obtained for Cr@InP, which is an excellent candidate as an in-gap band (IGB) absorber material. As a result, the sunlight absorption of the material is considerably improved through new sub-bandgap transitions across the IGB. Our results provide a systematic and overall perspective about the effects of transition metal hyperdoping into the exploitation of new semiconductors as potential key materials for photovoltaic applications.

Funding Projects

TypeCodeAcronymLeaderTitle
Government of SpainENE2016-77798-C4-4-RSEHTOP-QCUnspecifiedAprovechamiento de luz solar mediante un proceso de dos fotones
Universidad Politécnica de MadridVJIDOCUPM19GGMDNSMEPUnspecifiedUnspecified

More information

Item ID: 62649
DC Identifier: http://oa.upm.es/62649/
OAI Identifier: oai:oa.upm.es:62649
DOI: 10.3390/nano10020283
Official URL: https://www.mdpi.com/2079-4991/10/2/283/htm
Deposited by: Biblioteca ETSI Telecomunicación
Deposited on: 02 Jun 2020 11:18
Last Modified: 02 Jun 2020 11:18
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