New complex intermediate band materials for highly efficient photovoltaic cells

Wahnón Benarroch, Perla and Palacios Clemente, Pablo and Aguilera Bonet, Irene and Conesa Cegarra, José Carlos and Lucena García, Raquel and Gamarra Sánchez, Daniel (2009). New complex intermediate band materials for highly efficient photovoltaic cells. In: "24th European Photovoltaic Solar Energy Conference", 21-25 Sept 2009, Hamburgo, Alemania. ISBN 3-936338-25-6. pp. 187-190.

Description

Title: New complex intermediate band materials for highly efficient photovoltaic cells
Author/s:
  • Wahnón Benarroch, Perla
  • Palacios Clemente, Pablo
  • Aguilera Bonet, Irene
  • Conesa Cegarra, José Carlos
  • Lucena García, Raquel
  • Gamarra Sánchez, Daniel
Item Type: Presentation at Congress or Conference (Article)
Event Title: 24th European Photovoltaic Solar Energy Conference
Event Dates: 21-25 Sept 2009
Event Location: Hamburgo, Alemania
Title of Book: Proceedings of the 24th European Photovoltaic Solar Energy Conference
Date: 2009
ISBN: 3-936338-25-6
Subjects:
Freetext Keywords: intermediate band, modelling, high efficiency, silicon clathrate, sulphide, transition element, thin film
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Several complex compounds that result from inserting atoms of certain transition metals in known semiconductors are proposed as intermediate band materials that, used as light absorbers, would allow to increase substantially photovoltaic efficiency. In particular, these are sulphides containing indium in octahedral coordination as the spinel CdIn2S4 or scandium (Sc2S3, with a defect NaCl structure) with the trivalent element partially substituted by Ti or V, and the silicon clathrate of type II (having a fcc Bravais lattice with 34 Si atoms per primitive cell) in which V substitutes partially Si or Ag is occluded in the intracrystalline cavities. DFT calculations show that in several of these structures the added metal gives rise to a partially occupied, relatively narrow band located between the conduction and valence bands. Some of these structures have been synthesized experimentally, and we show UV-Vis-NIR spectra agreeing with the DFT predictions.

Funding Projects

TypeCodeAcronymLeaderTitle
Government of SpainCSD2006-0004GENESIS-FVUnspecifiedInvestigación en materia de una nueva generación de materiales, células y sistemas para la conversión fotovoltaica
Madrid Regional GovernmentS-05050/ENE/0310NUMANCIAUnspecifiedNueva generación de materiales, dispositivos y estrategias fotovoltaicas para un mejor aprovechamiento de la energía del sol
Government of SpainMAT2009-14625-CO3-01FOTOMATUnspecifiedDiseño, síntesis y caracterización de materiales fotovoltaicos avanzados de alta eficiencia

More information

Item ID: 62835
DC Identifier: http://oa.upm.es/62835/
OAI Identifier: oai:oa.upm.es:62835
Deposited by: Biblioteca ETSI Telecomunicación
Deposited on: 30 Jun 2020 10:10
Last Modified: 30 Jun 2020 10:10
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