Intermediate Band PV Materials: Proposal of New Systems and Experimental Realizations

Wahnón Benarroch, Perla and Palacios Clemente, Pablo and Aguilera Bonet, Irene and Seminovski Pérez, Yohanna and Sánchez Noriega, Kefrén and Conesa Cegarra, José Carlos and Lucena García, Raquel (2011). Intermediate Band PV Materials: Proposal of New Systems and Experimental Realizations. In: "26th European Photovoltaic Solar Energy Conference and Exhibition", 5-9 Sept 2011, Hamburgo, Alemania. ISBN 3-936338-27-2. pp. 44-47.

Description

Title: Intermediate Band PV Materials: Proposal of New Systems and Experimental Realizations
Author/s:
  • Wahnón Benarroch, Perla
  • Palacios Clemente, Pablo
  • Aguilera Bonet, Irene
  • Seminovski Pérez, Yohanna
  • Sánchez Noriega, Kefrén
  • Conesa Cegarra, José Carlos
  • Lucena García, Raquel
Item Type: Presentation at Congress or Conference (Article)
Event Title: 26th European Photovoltaic Solar Energy Conference and Exhibition
Event Dates: 5-9 Sept 2011
Event Location: Hamburgo, Alemania
Title of Book: Proceedings of the 26th European Photovoltaic Solar Energy Conference and Exhibition
Date: 2011
ISBN: 3-936338-27-2
Subjects:
Freetext Keywords: Intermediate Band, c-Si, In2S3, Modelling, Spectral Response, Thin Film Solar Cell, Photocatalysis
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The intermediate band (IB) solar cell, based on the absorption of two low energy photons to promote one electron across the full bandgap, has been proposed to increase PV efficiency by a factor above 1.5. Using DFT calculations we show here that silicon materials with certain elements inserted and which have been experimentally prepared and reported in the literature, develop an IB electronic structure able to implement an IB solar cell. In particular, this happens for Ti atoms introduced via ion implantation and occupying interstitial sites, and for S or Se atoms inserted in lattice sites by similar methods. In addition, we present new experimental data for another IB material previously proposed and synthesized by us, viz. vanadium-substituted In2S3: using a photocatalytic method, in which photogenerated electrons and holes are transferred to molecules at the surface of this material (made in powder form and suspended in an aqueous solution) producing thus chemical reactions, we show that insertion of V in In2S3 allows to generate electrons and holes, which can be extracted at the material surface, also with photons having energy lower than the In2S3 bandgap width. This material could thus be used to build an IB thin film PV cell.

Funding Projects

TypeCodeAcronymLeaderTitle
Government of SpainCSD2006-0004GENESIS-FVUnspecifiedInvestigación en materia de una nueva generación de materiales, células y sistemas para la conversión fotovoltaica
Government of SpainMAT2009-14625-C03-01FOTOMATUnspecifiedDiseño, síntesis y caracterización de materiales fotovoltaicos avanzados de alta eficiencia
Madrid Regional GovernmentS2009ENE-1477NUMANCIA IIUnspecifiedNueva generación de materiales, dispositivos y estrategias fotovoltaicas para un mejor aprovechamiento de la energía del sol

More information

Item ID: 62838
DC Identifier: http://oa.upm.es/62838/
OAI Identifier: oai:oa.upm.es:62838
Deposited by: Biblioteca ETSI Telecomunicación
Deposited on: 30 Jun 2020 11:43
Last Modified: 30 Jun 2020 11:43
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