On the potential of silicon intermediate band solar cells

López Estrada, Esther and Martí Vega, Antonio and Antolín Fernández, Elisa and Luque López, Antonio (2020). On the potential of silicon intermediate band solar cells. "Energies", v. 13 (n. 12); pp.. ISSN 1996-1073. https://doi.org/10.3390/en13123044.

Description

Title: On the potential of silicon intermediate band solar cells
Author/s:
  • López Estrada, Esther
  • Martí Vega, Antonio
  • Antolín Fernández, Elisa
  • Luque López, Antonio
Item Type: Article
Título de Revista/Publicación: Energies
Date: 12 June 2020
ISSN: 1996-1073
Volume: 13
Subjects:
Freetext Keywords: intermediate band solar cells; silicon; limit efficiency; non-overlapped coefficients; Auger recombination
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Electrónica Física, Ingeniería Eléctrica y Física Aplicada
UPM's Research Group: Silicio y Nuevos Conceptos para Células Solares
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Intermediate band solar cells (IBSCs) have an efficiency limit of 63.2%, which is significantly higher than the 40.7% limit for conventional single gap solar cells. In order to achieve the maximum efficiency, the total bandgap of the cell should be in the range of ~2 eV. However, that fact does not prevent other cells based on different Semiconductor bandgaps from benefiting from the presence of an intermediate band (IB) within their bandgap. Since silicon (1.12 eV bandgap) is the dominant material in solar cell technology, it is of interest to determine the limit efficiency of a silicon IBSC, because even a modest gain in efficiency could trigger a large commercial interest if the IB is implemented at low cost. In this work we study the limit efficiency of silicon-based IBSCs considering operating conditions that include the use of non-ideal photon casting between the optical transitions, different light intensities and Auger recombination. The results lead to the conclusion that a silicon IBSC, operating under the conventional model in which the sub-bandgaps add to the total silicon gap, provides an efficiency gain if operated in the medium-high concentration range. The performance of these devices is affected by Auger recombination only under extremely high concentrations

Funding Projects

TypeCodeAcronymLeaderTitle
Government of SpainTEC2017-92301-EXP2GAPSUnspecifiedUnspecified
Madrid Regional GovernmentS2018/EMT-4308MADRID-PV2UnspecifiedUnspecified
FP7283798NGCPVUnspecifiedUnspecified

More information

Item ID: 63651
DC Identifier: http://oa.upm.es/63651/
OAI Identifier: oai:oa.upm.es:63651
DOI: 10.3390/en13123044
Official URL: https://www.mdpi.com/1996-1073/13/12/3044
Deposited by: Prof. Antonio Martí Vega
Deposited on: 08 Sep 2020 09:57
Last Modified: 08 Sep 2020 09:57
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