Giant Reflection Coefficient on Sc0.26Al0.74N Polycrystalline Diamond Surface Acoustic Wave Resonators

Sinusía Lozano, Miguel and Chen, Zhuohui and Oliver A., Williams and Fuentes Iriarte, Gonzalo (2019). Giant Reflection Coefficient on Sc0.26Al0.74N Polycrystalline Diamond Surface Acoustic Wave Resonators. "physica status solidi (a)", v. 216 (n. 20); p. 1900360. ISSN 1862-6319. https://doi.org/10.1002/pssa.201900360.

Description

Title: Giant Reflection Coefficient on Sc0.26Al0.74N Polycrystalline Diamond Surface Acoustic Wave Resonators
Author/s:
  • Sinusía Lozano, Miguel
  • Chen, Zhuohui
  • Oliver A., Williams
  • Fuentes Iriarte, Gonzalo
Item Type: Article
Título de Revista/Publicación: physica status solidi (a)
Date: 2 August 2019
ISSN: 1862-6319
Volume: 216
Subjects:
Freetext Keywords: Piezoelectric Thin Films, Scandium Aluminum Nitride Thin Films, Surface Acoustic Wave Devices, Thin-Film Heterostructures
Faculty: E.T.S.I. Caminos, Canales y Puertos (UPM)
Department: Ciencia de los Materiales
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Since the commercialization of surface acoustic wave (SAW) devices, the technology is steadily increasing the device performances without compromising their power handling, size and price. Herein, one‐port SAW resonators are fabricated on scandium aluminum nitride (Sc0.26Al0.74N)/polycrystalline diamond heterostructures. SAW propagation properties are studied using three different piezoelectric thin‐film thicknesses within the heterostructure. The Rayleigh and Sezawa resonance frequencies are above 1.5 and 2.5 GHz, respectively, achieving Sezawa mode reflection coefficients below −50 dB. The polycrystalline diamond substrate is synthesized by microwave plasma chemical vapor deposition (MPCVD) on top of a 500 μm‐thick Si (001) substrate. The Sc0.26Al0.74N thin films are synthesized by reactive sputtering at nominally room temperature. The thin film's composition is analyzed by Rutherford backscattering spectrometry (RBS). The full width at half maximum (FWHM) of the X‐ray diffraction (XRD) ω scans below 3° indicates that the synthesized Sc0.26Al0.74N thin films are highly c‐axis oriented. The electromechanical coupling coefficient, quality factor, and dielectric loss parameters are computed by curve fitting the device electrical measurements to the simulation results of a modified Butterworth Van Dyke (mBVD) model implemented in the advance design system (ADS) tool.

More information

Item ID: 63833
DC Identifier: http://oa.upm.es/63833/
OAI Identifier: oai:oa.upm.es:63833
DOI: 10.1002/pssa.201900360
Official URL: https://onlinelibrary.wiley.com/doi/10.1002/pssa.201900360
Deposited by: Memoria Investigacion
Deposited on: 16 Sep 2020 15:24
Last Modified: 16 Sep 2020 15:24
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