Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix

Steindl, Petr and Sala, Elisa Maddalena and Alén Millán, Benito and Fuertes Marrón, David and Bimberg, Dieter and Klenovsky, Petr (2019). Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix. "Physical Review B", v. 100 (n. 195407); pp. 1-19. ISSN 2469-9950. https://doi.org/10.1103/PhysRevB.100.195407.

Description

Title: Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix
Author/s:
  • Steindl, Petr
  • Sala, Elisa Maddalena
  • Alén Millán, Benito
  • Fuertes Marrón, David
  • Bimberg, Dieter
  • Klenovsky, Petr
Item Type: Article
Título de Revista/Publicación: Physical Review B
Date: November 2019
ISSN: 2469-9950
Volume: 100
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The optical response of (InGa)(AsSb)/GaAs quantum dots (QDs) grown on GaP (001) substrates is studied by means of excitation and temperature-dependent photoluminescence (PL), and it is related to their complex electronic structure. Such QDs exhibit concurrently direct and indirect transitions, which allows the swapping of Γ and L quantum confined states in energy, depending on details of their stoichiometry. Based on realistic data on QD structure and composition, derived from high-resolution transmission electron microscopy (HRTEM) measurements, simulations by means of k⋅p theory are performed. The theoretical prediction of both momentum direct and indirect type-I optical transitions are confirmed by the experiments presented here. Additional investigations by a combination of Raman and photoreflectance spectroscopy show modifications of the hydrostatic strain in the QD layer, depending on the sequential addition of QDs and capping layer. A variation of the excitation density across four orders of magnitude reveals a 50-meV energy blueshift of the QD emission. Our findings suggest that the assignment of the type of transition, based solely by the observation of a blueshift with increased pumping, is insufficient. We propose therefore a more consistent approach based on the analysis of the character of the blueshift evolution with optical pumping, which employs a numerical model based on a semi-self-consistent configuration interaction method.

Funding Projects

TypeCodeAcronymLeaderTitle
Horizon 2020731473QuantERANARODOWE CENTRUM NAUKIQuantERA ERA-NET Cofund in Quantum Technologies
Government of SpainEUIN2017-88844UnspecifiedUnspecifiedQuantum semiconductor technologies based on antimonides

More information

Item ID: 63884
DC Identifier: http://oa.upm.es/63884/
OAI Identifier: oai:oa.upm.es:63884
DOI: 10.1103/PhysRevB.100.195407
Official URL: https://journals.aps.org/prb/abstract/10.1103/PhysRevB.100.195407
Deposited by: Memoria Investigacion
Deposited on: 20 Mar 2021 08:19
Last Modified: 20 Mar 2021 08:19
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