High open-circuit voltage in transition metal dichalcogenide solar cells

Svatek, Simon and Bueno Blanco, Carlos and Lin, Der-Yuh and Kerfoot, James and Macías, Carlos and Zehender, Marius H. and Tobías, Ignacio and García Linares, Pablo and Taniguchi, Takashi and Watanabe, Kenji and Benton, Peter and Antolín Fernández, Elisa (2020). High open-circuit voltage in transition metal dichalcogenide solar cells. "Nano Energy" ; pp. 1-25. ISSN 2211-2855. https://doi.org/10.1016/j.nanoen.2020.105427.

Description

Title: High open-circuit voltage in transition metal dichalcogenide solar cells
Author/s:
  • Svatek, Simon
  • Bueno Blanco, Carlos
  • Lin, Der-Yuh
  • Kerfoot, James
  • Macías, Carlos
  • Zehender, Marius H.
  • Tobías, Ignacio
  • García Linares, Pablo
  • Taniguchi, Takashi
  • Watanabe, Kenji
  • Benton, Peter
  • Antolín Fernández, Elisa
Item Type: Article
Título de Revista/Publicación: Nano Energy
Date: 2020
ISSN: 2211-2855
Subjects:
Freetext Keywords: ultra-thin photovoltaics layered materials transition metal dichalcogenides low Woc
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Electrónica Física
UPM's Research Group: Silicio y Nuevos Conceptos para Células Solares
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The conversion efficiency of ultra-thin solar cells based on layered materials has been limited by their open-circuit voltage, which is typically pinned to a value under 0.6 V. Here we report an open-circuit voltage of 1.02 V in a 120 nm-thick vertically stacked homojunction fabricated with substitutionally doped MoS2. This high open-circuit voltage is consistent with the band alignment in the MoS2 homojunction, which is more favourable than in widely-used TMDC heterostructures. It is also attributed to the high performance of the substitutionally doped MoS2, in particular the p-type material doped with Nb, which is demonstrated by the observation of electroluminescence from tunnelling graphene/BN/MoS2 structures in spite of the indirect nature of bulk MoS2. We find that illuminating the TMDC/metal contacts decreases the measured open-circuit voltage in MoS2 van der Waals homojunctions because they are photoactive, which points to the need of developing low-resistance, ohmic contacts to doped MoS2 in order to achieve high efficiency in practical devices. The high open-circuit voltage demonstrated here confirms the potential of layered transition-metal dichalcogenides for the development of highly efficient, ultra-thin solar cells.

Funding Projects

TypeCodeAcronymLeaderTitle
Government of SpainTEC2017-92424-EXPUnspecifiedUnspecifiedUnspecified

More information

Item ID: 64257
DC Identifier: http://oa.upm.es/64257/
OAI Identifier: oai:oa.upm.es:64257
DOI: 10.1016/j.nanoen.2020.105427
Official URL: https://doi.org/10.1016/j.nanoen.2020.105427
Deposited by: Dr. Elisa Antolín
Deposited on: 01 Oct 2020 10:57
Last Modified: 01 Oct 2020 10:58
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