Thermal stability of copper nitride thin films: The role of nitrogen migration

Gonzalez Arrabal, Raquel and Gordillo, N. and Martin Gonzalez, M.S. and Ruiz Bustos, R. and Argullo Lopez, Fernando (2010). Thermal stability of copper nitride thin films: The role of nitrogen migration. "Journal of Applied Physics", v. 107 (n. 10); pp.. ISSN 0021-8979. https://doi.org/10.1063/1.3369450.

Description

Title: Thermal stability of copper nitride thin films: The role of nitrogen migration
Author/s:
  • Gonzalez Arrabal, Raquel
  • Gordillo, N.
  • Martin Gonzalez, M.S.
  • Ruiz Bustos, R.
  • Argullo Lopez, Fernando
Item Type: Article
Título de Revista/Publicación: Journal of Applied Physics
Date: May 2010
ISSN: 0021-8979
Volume: 107
Subjects:
Faculty: Otros Centros UPM
Department: Ingeniería Nuclear [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The atomic composition, structural, morphological, and optical properties of N-rich copper nitride thin films have been investigated prior to and after annealing them in vacuum at temperatures up to 300 °C. Films were characterized by means of ion-beam analysis (IBMA), X-ray diffraction (XRD), atomic force microscopy (AFM), and spectroscopic ellipsometry techniques (SE). The data reveal that even when the total (integrated over the whole thickness) atomic composition of the films remains constant, nitrogen starts to migrate from the bulk to the film surface, without out-diffusing, at temperatures as low as 100 °C. This migration leads to two chemical phases with different atomic concentration of nitrogen, lattice parameters, and crystallographic orientation but with the same crystal structure. XRD experimental and Rietveld refined data seem to confirm that nitrogen excess accommodates in interstitial locations within the anti-ReO3 crystal lattice forming a solid solution. The influence of nitrogen migration on the optical (electronic) properties of the films will be discussed

More information

Item ID: 6776
DC Identifier: http://oa.upm.es/6776/
OAI Identifier: oai:oa.upm.es:6776
DOI: 10.1063/1.3369450
Official URL: http://jap.aip.org/resource/1/japiau/v107/i10/p103513_s1?isAuthorized=no
Deposited by: Memoria Investigacion
Deposited on: 04 May 2011 10:45
Last Modified: 20 Apr 2016 15:56
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