Advances in Quantum dot Intermediate band Solar Cells.

Antolín Fernández, Elisa; Martí Vega, Antonio; García-Linares Fontes, Pablo; Ramiro Gonzalez, Iñigo; Hernández Martín, Estela; Farmer, C.D.; Stanley, Colin y Luque López, Antonio (2010). Advances in Quantum dot Intermediate band Solar Cells.. En: "35th IEEE Photovoltaic Specialists Conference, PVSC 2010", 20/06/2010 - 25/06/2010, Hawaii, EEUU. ISBN 978-1-4244-5890-5.

Descripción

Título: Advances in Quantum dot Intermediate band Solar Cells.
Autor/es:
  • Antolín Fernández, Elisa
  • Martí Vega, Antonio
  • García-Linares Fontes, Pablo
  • Ramiro Gonzalez, Iñigo
  • Hernández Martín, Estela
  • Farmer, C.D.
  • Stanley, Colin
  • Luque López, Antonio
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Fechas del Evento: 20/06/2010 - 25/06/2010
Lugar del Evento: Hawaii, EEUU
Título del Libro: Proceedings of the 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Fecha: 2010
ISBN: 978-1-4244-5890-5
Materias:
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

Several groups have reported on intermediate band solar cells (IBSC) fabricated with InAs/GaAs quantum dots (QD) which exhibit quantum efficiencies (QE) for sub-bandgap photon energies. However, this QE is produced by the absorption of photons only through valence band (VB) to intermediate band (IB) transitions. The absorption of photons of that energy in IB to conduction band (CB) transitions is weak and is usually replaced by carrier escape. This mechanism is incompatible with the preservation of the output voltage, and therefore, it cannot lead to the high efficiencies predicted by the IBSC model. In this work, we discuss the contribution of thermal and tunneling mechanisms to IB-CB carrier escape in current QD-IBSCs. It is experimentally demonstrated that in QD-IBSC prototypes where tunnel escape has been eliminated, the sub-bandgap QE is suppressed at sufficiently low temperatures, and when this occurs, the only limit for the open-circuit voltage (VOC) is the fundamental semiconductor bandgap, as stated by the IBSC theoretical model.

Más información

ID de Registro: 8217
Identificador DC: http://oa.upm.es/8217/
Identificador OAI: oai:oa.upm.es:8217
URL Oficial: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5614200&tag=1
Depositado por: Memoria Investigacion
Depositado el: 04 Ago 2011 09:51
Ultima Modificación: 20 Abr 2016 17:05
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