Advances in Quantum dot Intermediate band Solar Cells.

Antolín Fernández, Elisa and Martí Vega, Antonio and García-Linares Fontes, Pablo and Ramiro Gonzalez, Iñigo and Hernández Martín, Estela and Farmer, C.D. and Stanley, Colin and Luque López, Antonio (2010). Advances in Quantum dot Intermediate band Solar Cells.. In: "35th IEEE Photovoltaic Specialists Conference, PVSC 2010", 20/06/2010 - 25/06/2010, Hawaii, EEUU. ISBN 978-1-4244-5890-5.

Description

Title: Advances in Quantum dot Intermediate band Solar Cells.
Author/s:
  • Antolín Fernández, Elisa
  • Martí Vega, Antonio
  • García-Linares Fontes, Pablo
  • Ramiro Gonzalez, Iñigo
  • Hernández Martín, Estela
  • Farmer, C.D.
  • Stanley, Colin
  • Luque López, Antonio
Item Type: Presentation at Congress or Conference (Article)
Event Title: 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Event Dates: 20/06/2010 - 25/06/2010
Event Location: Hawaii, EEUU
Title of Book: Proceedings of the 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Date: 2010
ISBN: 978-1-4244-5890-5
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

Full text

[img]
Preview
PDF - Requires a PDF viewer, such as GSview, Xpdf or Adobe Acrobat Reader
Download (2MB) | Preview

Abstract

Several groups have reported on intermediate band solar cells (IBSC) fabricated with InAs/GaAs quantum dots (QD) which exhibit quantum efficiencies (QE) for sub-bandgap photon energies. However, this QE is produced by the absorption of photons only through valence band (VB) to intermediate band (IB) transitions. The absorption of photons of that energy in IB to conduction band (CB) transitions is weak and is usually replaced by carrier escape. This mechanism is incompatible with the preservation of the output voltage, and therefore, it cannot lead to the high efficiencies predicted by the IBSC model. In this work, we discuss the contribution of thermal and tunneling mechanisms to IB-CB carrier escape in current QD-IBSCs. It is experimentally demonstrated that in QD-IBSC prototypes where tunnel escape has been eliminated, the sub-bandgap QE is suppressed at sufficiently low temperatures, and when this occurs, the only limit for the open-circuit voltage (VOC) is the fundamental semiconductor bandgap, as stated by the IBSC theoretical model.

More information

Item ID: 8217
DC Identifier: http://oa.upm.es/8217/
OAI Identifier: oai:oa.upm.es:8217
Official URL: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5614200&tag=1
Deposited by: Memoria Investigacion
Deposited on: 04 Aug 2011 09:51
Last Modified: 20 Apr 2016 17:05
  • Logo InvestigaM (UPM)
  • Logo GEOUP4
  • Logo Open Access
  • Open Access
  • Logo Sherpa/Romeo
    Check whether the anglo-saxon journal in which you have published an article allows you to also publish it under open access.
  • Logo Dulcinea
    Check whether the spanish journal in which you have published an article allows you to also publish it under open access.
  • Logo de Recolecta
  • Logo del Observatorio I+D+i UPM
  • Logo de OpenCourseWare UPM