Antolín Fernández, Elisa and Martí Vega, Antonio and García-Linares Fontes, Pablo and Ramiro Gonzalez, Iñigo and Hernández Martín, Estela and Luque López, Antonio (2010) Raising the Efficiency Limit of the GaAs-based Intermediate Band Solar Cell Through the Implementation of a Mololithic Tandem with an AlGaAs top Cell. In: 25th European Photovoltaic Solar Energy Conference and Exhibition and 5th World Conference on Photovoltaic Energy, 25th EU PVSEC/5th WCPEC 2010, 06/10/2010 - 10/09/2010, Valencia, España.
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| Item Type: | Presentation at Congress or Day (Article) | ||||||||||||||
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| Title: | Raising the Efficiency Limit of the GaAs-based Intermediate Band Solar Cell Through the Implementation of a Mololithic Tandem with an AlGaAs top Cell. | ||||||||||||||
| Event Title: | 25th European Photovoltaic Solar Energy Conference and Exhibition and 5th World Conference on Photovoltaic Energy, 25th EU PVSEC/5th WCPEC 2010 | ||||||||||||||
| Event Dates: | 06/10/2010 - 10/09/2010 | ||||||||||||||
| Event Location: | Valencia, España | ||||||||||||||
| Title of Book: | Proceedings of the 25th European Photovoltaic Solar Energy Conference and Exhibition and 5th World Conference on Photovoltaic Energy, 25th EU PVSEC/5th WCPEC 2010 | ||||||||||||||
| Publisher: | WIP-Renewable Energies | ||||||||||||||
| Date: | 2010 | ||||||||||||||
| ISBN: | 3-936338-26-4 | ||||||||||||||
| Department: | Physical Electronics | ||||||||||||||
| Faculty: | E.T.S.I. Telecommunication (UPM) | ||||||||||||||
| Creative Commons licenses: | Recognition - No derivative works - No commercial | ||||||||||||||
| Item ID: | 8219 | ||||||||||||||
| Subjects: | Renewable Energy Physics |
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| PDF 443Kb - Idioma: English |
Official URL: http://www.photovoltaic-conference.com/conference/conference-proceedings.html
Abstract
The high efficiency limit of the intermediate band solar cell (IBSC) corresponds to the case of using as intermediate band (IB) host material a semiconductor with gap in the range of 2 eV. Traditional photovoltaic materials, such as Si and GaAs, are not appropriate to produce IB devices because their gaps are too narrow. To overcome this problem, we propose the implementation of a multi-junction device consisting of an IBSC combined with a single gap cell. We calculate the efficiency limits using the detailed balance model and conclude that they are very high (> 60% under maximum concentration) for any fundamental bandgap from 0.7 to 3.6 eV in the IBSC inserted in the tandem. In particular, the two-terminal tandem of a GaAs-based IBSC current matched to an optimized AlGaAs top cell has an efficiency limit as high as 64%.
| Item Type: | Presentation at Congress or Day (Article) |
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| Uncontrolled Keywords: | Fundamentals, Detailed Balance, Intermediate Band, Multi-junction. |
| Subjects: | Renewable Energy Physics |
| Código ID: | 8219 |
| Depositado Por: | Memoria Investigacion |
| Depositado el: | 04 Aug 2011 10:30 |
| Last Modified: | 04 Aug 2011 10:30 |
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