Raising the Efficiency Limit of the GaAs-based Intermediate Band Solar Cell Through the Implementation of a Mololithic Tandem with an AlGaAs top Cell.

Antolín Fernández, Elisa and Martí Vega, Antonio and García-Linares Fontes, Pablo and Ramiro Gonzalez, Iñigo and Hernández Martín, Estela and Luque López, Antonio (2010). Raising the Efficiency Limit of the GaAs-based Intermediate Band Solar Cell Through the Implementation of a Mololithic Tandem with an AlGaAs top Cell.. In: "25th European Photovoltaic Solar Energy Conference and Exhibition and 5th World Conference on Photovoltaic Energy, 25th EU PVSEC/5th WCPEC 2010", 06/10/2010 - 10/09/2010, Valencia, España. ISBN 3-936338-26-4.

Description

Title: Raising the Efficiency Limit of the GaAs-based Intermediate Band Solar Cell Through the Implementation of a Mololithic Tandem with an AlGaAs top Cell.
Author/s:
  • Antolín Fernández, Elisa
  • Martí Vega, Antonio
  • García-Linares Fontes, Pablo
  • Ramiro Gonzalez, Iñigo
  • Hernández Martín, Estela
  • Luque López, Antonio
Item Type: Presentation at Congress or Conference (Article)
Event Title: 25th European Photovoltaic Solar Energy Conference and Exhibition and 5th World Conference on Photovoltaic Energy, 25th EU PVSEC/5th WCPEC 2010
Event Dates: 06/10/2010 - 10/09/2010
Event Location: Valencia, España
Title of Book: Proceedings of the 25th European Photovoltaic Solar Energy Conference and Exhibition and 5th World Conference on Photovoltaic Energy, 25th EU PVSEC/5th WCPEC 2010
Date: 2010
ISBN: 3-936338-26-4
Subjects:
Freetext Keywords: Fundamentals, Detailed Balance, Intermediate Band, Multi-junction.
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The high efficiency limit of the intermediate band solar cell (IBSC) corresponds to the case of using as intermediate band (IB) host material a semiconductor with gap in the range of 2 eV. Traditional photovoltaic materials, such as Si and GaAs, are not appropriate to produce IB devices because their gaps are too narrow. To overcome this problem, we propose the implementation of a multi-junction device consisting of an IBSC combined with a single gap cell. We calculate the efficiency limits using the detailed balance model and conclude that they are very high (> 60% under maximum concentration) for any fundamental bandgap from 0.7 to 3.6 eV in the IBSC inserted in the tandem. In particular, the two-terminal tandem of a GaAs-based IBSC current matched to an optimized AlGaAs top cell has an efficiency limit as high as 64%.

More information

Item ID: 8219
DC Identifier: http://oa.upm.es/8219/
OAI Identifier: oai:oa.upm.es:8219
Official URL: http://www.photovoltaic-conference.com/conference/conference-proceedings.html
Deposited by: Memoria Investigacion
Deposited on: 04 Aug 2011 08:30
Last Modified: 20 Apr 2016 17:05
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