Raising the Efficiency Limit of the GaAs-based Intermediate Band Solar Cell Through the Implementation of a Mololithic Tandem with an AlGaAs top Cell.

Antolín Fernández, Elisa; Martí Vega, Antonio; García-Linares Fontes, Pablo; Ramiro Gonzalez, Iñigo; Hernández Martín, Estela y Luque López, Antonio (2010). Raising the Efficiency Limit of the GaAs-based Intermediate Band Solar Cell Through the Implementation of a Mololithic Tandem with an AlGaAs top Cell.. En: "25th European Photovoltaic Solar Energy Conference and Exhibition and 5th World Conference on Photovoltaic Energy, 25th EU PVSEC/5th WCPEC 2010", 06/10/2010 - 10/09/2010, Valencia, España. ISBN 3-936338-26-4.

Descripción

Título: Raising the Efficiency Limit of the GaAs-based Intermediate Band Solar Cell Through the Implementation of a Mololithic Tandem with an AlGaAs top Cell.
Autor/es:
  • Antolín Fernández, Elisa
  • Martí Vega, Antonio
  • García-Linares Fontes, Pablo
  • Ramiro Gonzalez, Iñigo
  • Hernández Martín, Estela
  • Luque López, Antonio
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: 25th European Photovoltaic Solar Energy Conference and Exhibition and 5th World Conference on Photovoltaic Energy, 25th EU PVSEC/5th WCPEC 2010
Fechas del Evento: 06/10/2010 - 10/09/2010
Lugar del Evento: Valencia, España
Título del Libro: Proceedings of the 25th European Photovoltaic Solar Energy Conference and Exhibition and 5th World Conference on Photovoltaic Energy, 25th EU PVSEC/5th WCPEC 2010
Fecha: 2010
ISBN: 3-936338-26-4
Materias:
Palabras Clave Informales: Fundamentals, Detailed Balance, Intermediate Band, Multi-junction.
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

The high efficiency limit of the intermediate band solar cell (IBSC) corresponds to the case of using as intermediate band (IB) host material a semiconductor with gap in the range of 2 eV. Traditional photovoltaic materials, such as Si and GaAs, are not appropriate to produce IB devices because their gaps are too narrow. To overcome this problem, we propose the implementation of a multi-junction device consisting of an IBSC combined with a single gap cell. We calculate the efficiency limits using the detailed balance model and conclude that they are very high (> 60% under maximum concentration) for any fundamental bandgap from 0.7 to 3.6 eV in the IBSC inserted in the tandem. In particular, the two-terminal tandem of a GaAs-based IBSC current matched to an optimized AlGaAs top cell has an efficiency limit as high as 64%.

Más información

ID de Registro: 8219
Identificador DC: http://oa.upm.es/8219/
Identificador OAI: oai:oa.upm.es:8219
URL Oficial: http://www.photovoltaic-conference.com/conference/conference-proceedings.html
Depositado por: Memoria Investigacion
Depositado el: 04 Ago 2011 08:30
Ultima Modificación: 20 Abr 2016 17:05
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