Optical Transmittance Maximization in Superior Performance Tunnel Junctions for Very High Concentration Applications.

García Vara, Iván; Rey-Stolle Prado, Ignacio y Algora del Valle, Carlos (2010). Optical Transmittance Maximization in Superior Performance Tunnel Junctions for Very High Concentration Applications.. En: "25th European Photovoltaic Solar Energy Conference and Exhibition and 5th World Conference on Photovoltaic Energy, 25th EU PVSEC/5th WCPEC 2010", 06/09/2010 - 10/09/2010, Valencia, España. ISBN 3-936338-26-4.

Descripción

Título: Optical Transmittance Maximization in Superior Performance Tunnel Junctions for Very High Concentration Applications.
Autor/es:
  • García Vara, Iván
  • Rey-Stolle Prado, Ignacio
  • Algora del Valle, Carlos
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: 25th European Photovoltaic Solar Energy Conference and Exhibition and 5th World Conference on Photovoltaic Energy, 25th EU PVSEC/5th WCPEC 2010
Fechas del Evento: 06/09/2010 - 10/09/2010
Lugar del Evento: Valencia, España
Título del Libro: Proceedings of the 25th European Photovoltaic Solar Energy Conference and Exhibition and 5th World Conference on Photovoltaic Energy, 25th EU PVSEC/5th WCPEC 2010
Fecha: 2010
ISBN: 3-936338-26-4
Materias:
Palabras Clave Informales: multijunction solar cell, tunnel junction, optical losses
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

The light transmission through a tunnel junction in a multijunction solar cell depends on the optical properties and thickness of the whole solar cell layers stack, which configure the light absorption, reflection and interference processes taking place inside the semiconductor structure. In this paper the focus is put on the AlGaAs barrier layers of p++AlGaAs/n++GaAs and p++AlGaAs/n++GaInP tunnel junctions inserted into a GaInP/GaAs dualjunction solar cell. The aim is to analyze the effect of the thickness and Al-composition of these barrier layers on the light transmittance of the tunnel junction, using the bottom cell Jsc as the merit figure to appraise it. An intricate relation between this Jsc and the barrier layers parameters, caused by interferential reflectance, was observed. The importance of an appropriate optical design of the semiconductor structure was corroborated by a non-negligible gain in the bottom cell Jsc when choosing the appropriate barrier layers Al-compositions and thicknesses from a range of practical values for which the optical absorption is not the main contributor to the optical losses.

Más información

ID de Registro: 8258
Identificador DC: http://oa.upm.es/8258/
Identificador OAI: oai:oa.upm.es:8258
URL Oficial: http://www.photovoltaic-conference.com/
Depositado por: Memoria Investigacion
Depositado el: 29 Jul 2011 14:54
Ultima Modificación: 20 Abr 2016 17:07
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