Distributed Simulation of Real Tunnel Junction Effects in Multi-Junction Solar Cells

Espinet González, Pilar; García Vara, Iván; Rey-Stolle Prado, Ignacio; Algora del Valle, Carlos y Baudrit, Mathieu (2010). Distributed Simulation of Real Tunnel Junction Effects in Multi-Junction Solar Cells. En: "6th International Conference on Concentrating Photovoltaic Systems, CPV-6", 07/04/2010 - 09/04/2010, Friburgo, Alemania. ISBN 9780735408272.

Descripción

Título: Distributed Simulation of Real Tunnel Junction Effects in Multi-Junction Solar Cells
Autor/es:
  • Espinet González, Pilar
  • García Vara, Iván
  • Rey-Stolle Prado, Ignacio
  • Algora del Valle, Carlos
  • Baudrit, Mathieu
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: 6th International Conference on Concentrating Photovoltaic Systems, CPV-6
Fechas del Evento: 07/04/2010 - 09/04/2010
Lugar del Evento: Friburgo, Alemania
Título del Libro: Proceedings of the 6th International Conference on Concentrating Photovoltaic Systems, CPV-6
Fecha: 2010
ISBN: 9780735408272
Materias:
Palabras Clave Informales: Photovoltaics, Concentrator, Tunnel Junction, Multi-Junction, Simulations, Solar Cells
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

In this paper, we present an improved 3D distributed model that considers real operation regimes in a tunnel junction. This advanced method is able to accurately simulate the high concentrations at which the current in the solar cell surpasses the peak current of the tunnel junction. Simulations of dual-junction solar cells were carried out with different light profiles and including chromatic aberration to show the capabilities of the model. Such simulations show that, under some circumstances, the solar cell short circuit current may be slightly higher than the tunnel junction peak current without showing the characteristic dip in the J-V curve. This behavior is caused by the lateral current spreading towards the dark regions, which occurs through the anode region of the tunnel junction.

Más información

ID de Registro: 8260
Identificador DC: http://oa.upm.es/8260/
Identificador OAI: oai:oa.upm.es:8260
URL Oficial: http://www.cpv-6.org/cms/
Depositado por: Memoria Investigacion
Depositado el: 29 Jul 2011 14:30
Ultima Modificación: 20 Abr 2016 17:07
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