Numerical Simulation of III-V Solar Cells Using D-AMPS

Barrera, M. and Rubinelli, F. and Plá, J. and Rey-Stolle Prado, Ignacio (2010). Numerical Simulation of III-V Solar Cells Using D-AMPS. In: "25th European Photovoltaic Solar Energy Conference and Exhibition and 5th World Conference on Photovoltaic Energy, 25th EU PVSEC/5th WCPEC 2010", 06/09/2010 - 10/09/2010, Valencia, España. ISBN 3-936338-26-4.

Description

Title: Numerical Simulation of III-V Solar Cells Using D-AMPS
Author/s:
  • Barrera, M.
  • Rubinelli, F.
  • Plá, J.
  • Rey-Stolle Prado, Ignacio
Item Type: Presentation at Congress or Conference (Article)
Event Title: 25th European Photovoltaic Solar Energy Conference and Exhibition and 5th World Conference on Photovoltaic Energy, 25th EU PVSEC/5th WCPEC 2010
Event Dates: 06/09/2010 - 10/09/2010
Event Location: Valencia, España
Title of Book: Proceedings of the 25th European Photovoltaic Solar Energy Conference and Exhibition and 5th World Conference on Photovoltaic Energy, 25th EU PVSEC/5th WCPEC 2010
Date: 2010
ISBN: 3-936338-26-4
Subjects:
Freetext Keywords: III-V semiconductors, simulation, solar cell, concentration
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Numerical simulation of devices plays a crucial role in their design, performance prediction, and comprehension of the fundamental phenomena ruling their operation. Here, we present results obtained using the code D-AMPS-1D, that was conveniently modified to consider the particularities of III-V solar cell devices. This work, that is a continuation of a previous paper regarding solar cells for space applications, is focused on solar cells structures than find application for terrestrial use under concentrated solar illumination. The devices were fabricated at the Solar Energy Institute of the Technical University of Madrid (UPM). The first simulations results on InGaP cells are presented. The influence of band offsets and band bending at the window-emitter interface on the quantum efficiency was studied. A remarkable match of the experimental quantum efficiency was obtained. Finally, numerical simulation of single junction n-p InGaP-Ge solar cells was performed.

More information

Item ID: 8264
DC Identifier: http://oa.upm.es/8264/
OAI Identifier: oai:oa.upm.es:8264
Official URL: http://www.photovoltaic-conference.com/
Deposited by: Memoria Investigacion
Deposited on: 29 Jul 2011 11:55
Last Modified: 20 Apr 2016 17:07
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