Numerical Simulation of III-V Solar Cells Using D-AMPS

Barrera, M.; Rubinelli, F.; Plá, J. y Rey-Stolle Prado, Ignacio (2010). Numerical Simulation of III-V Solar Cells Using D-AMPS. En: "25th European Photovoltaic Solar Energy Conference and Exhibition and 5th World Conference on Photovoltaic Energy, 25th EU PVSEC/5th WCPEC 2010", 06/09/2010 - 10/09/2010, Valencia, España. ISBN 3-936338-26-4.

Descripción

Título: Numerical Simulation of III-V Solar Cells Using D-AMPS
Autor/es:
  • Barrera, M.
  • Rubinelli, F.
  • Plá, J.
  • Rey-Stolle Prado, Ignacio
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: 25th European Photovoltaic Solar Energy Conference and Exhibition and 5th World Conference on Photovoltaic Energy, 25th EU PVSEC/5th WCPEC 2010
Fechas del Evento: 06/09/2010 - 10/09/2010
Lugar del Evento: Valencia, España
Título del Libro: Proceedings of the 25th European Photovoltaic Solar Energy Conference and Exhibition and 5th World Conference on Photovoltaic Energy, 25th EU PVSEC/5th WCPEC 2010
Fecha: 2010
ISBN: 3-936338-26-4
Materias:
Palabras Clave Informales: III-V semiconductors, simulation, solar cell, concentration
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

Numerical simulation of devices plays a crucial role in their design, performance prediction, and comprehension of the fundamental phenomena ruling their operation. Here, we present results obtained using the code D-AMPS-1D, that was conveniently modified to consider the particularities of III-V solar cell devices. This work, that is a continuation of a previous paper regarding solar cells for space applications, is focused on solar cells structures than find application for terrestrial use under concentrated solar illumination. The devices were fabricated at the Solar Energy Institute of the Technical University of Madrid (UPM). The first simulations results on InGaP cells are presented. The influence of band offsets and band bending at the window-emitter interface on the quantum efficiency was studied. A remarkable match of the experimental quantum efficiency was obtained. Finally, numerical simulation of single junction n-p InGaP-Ge solar cells was performed.

Más información

ID de Registro: 8264
Identificador DC: http://oa.upm.es/8264/
Identificador OAI: oai:oa.upm.es:8264
URL Oficial: http://www.photovoltaic-conference.com/
Depositado por: Memoria Investigacion
Depositado el: 29 Jul 2011 11:55
Ultima Modificación: 20 Abr 2016 17:07
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