Si and SixGe1-x NWs studied by Raman spectroscopy

Anaya, J. and Prieto Colorado, Ángel Carmelo and Martínez de Quel Pérez, Óscar and Torres, A. and Martin Martin, A. and Jiménez López, Juan Ignacio and Rodríguez Domínguez, Andrés and Sangrador García, Jesús and Rodríguez Rodríguez, Tomás (2010). Si and SixGe1-x NWs studied by Raman spectroscopy. In: "10th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors, NOEKS 10", 04/07/2010 - 07/07/2010, Halle, Saale, Alemania.

Description

Title: Si and SixGe1-x NWs studied by Raman spectroscopy
Author/s:
  • Anaya, J.
  • Prieto Colorado, Ángel Carmelo
  • Martínez de Quel Pérez, Óscar
  • Torres, A.
  • Martin Martin, A.
  • Jiménez López, Juan Ignacio
  • Rodríguez Domínguez, Andrés
  • Sangrador García, Jesús
  • Rodríguez Rodríguez, Tomás
Item Type: Presentation at Congress or Conference (Article)
Event Title: 10th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors, NOEKS 10
Event Dates: 04/07/2010 - 07/07/2010
Event Location: Halle, Saale, Alemania
Title of Book: Proceedings of the 10th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors, NOEKS 10
Date: 2010
Subjects:
Freetext Keywords: Si, nanowires, Raman spectroscopy, phonon confinement model, heat dissipation, finite element analysis
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Tecnología Electrónica [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Group IV nanostructures have attracted a great deal of attention because of their potential applications in optoelectronics and nanodevices. Raman spectroscopy has been extensively used to characterize nanostructures since it provides non destructive information about their size, by the adequate modeling of the phonon confinement effect. The Raman spectrum is also sensitive to other factors, as stress and temperature, which can mix with the size effects borrowing the interpretation of the Raman spectrum. We present herein an analysis of the Raman spectra obtained for Si and SiGe nanowires; the influence of the excitation conditions and the heat dissipation media are discussed in order to optimize the experimental conditions for reliable spectra acquisition and interpretation.

More information

Item ID: 8279
DC Identifier: http://oa.upm.es/8279/
OAI Identifier: oai:oa.upm.es:8279
Official URL: http://onlinelibrary.wiley.com/doi/10.1002/pssc.201083990/abstract
Deposited by: Memoria Investigacion
Deposited on: 27 Jul 2011 11:14
Last Modified: 20 Apr 2016 17:08
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