Modelling and Characterization of Multiple Level Intermediate Band Solar Cell

García-Linares Fontes, Pablo; Martí Vega, Antonio; Antolín Fernández, Elisa; Hernández Martín, Estela; Ramiro Gonzalez, Iñigo y Luque López, Antonio (2010). Modelling and Characterization of Multiple Level Intermediate Band Solar Cell. En: "25th European Photovoltaic Solar Energy Conference and Exhibition and 5th World Conference on Photovoltaic Energy, 25th EU PVSEC/5th WCPEC 2010", 06/09/2010 - 10/09/2010, Valencia, España. ISBN 3-936338-26-4.

Descripción

Título: Modelling and Characterization of Multiple Level Intermediate Band Solar Cell
Autor/es:
  • García-Linares Fontes, Pablo
  • Martí Vega, Antonio
  • Antolín Fernández, Elisa
  • Hernández Martín, Estela
  • Ramiro Gonzalez, Iñigo
  • Luque López, Antonio
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: 25th European Photovoltaic Solar Energy Conference and Exhibition and 5th World Conference on Photovoltaic Energy, 25th EU PVSEC/5th WCPEC 2010
Fechas del Evento: 06/09/2010 - 10/09/2010
Lugar del Evento: Valencia, España
Título del Libro: Proceedings of the 25th European Photovoltaic Solar Energy Conference and Exhibition and 5th World Conference on Photovoltaic Energy, 25th EU PVSEC/5th WCPEC 2010
Fecha: 2010
ISBN: 3-936338-26-4
Materias:
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

Intermediate band solar cells (IBSCs) are a new kind of devices capable of surpassing the Shockley Queisser efficiency limit for conventional solar cells. This novel technology requires the use of a new type of material named intermediate band (IB) material which makes a better use of the solar spectrum thanks to the existence of a collection of electronic levels within the band gap of the semiconductor. Quantum Dots (QDs) remain as a feasible technology to implement IB materials. InAs/GaAs QD-IBSCs were manufactured in order to test the validity of the concept, although their real size and shape are far from the optimum. This causes extra electron levels to appear within the nanostructure confining potential, degrading the performance of the device. In this paper, the effect of these extra levels will be studied through a multiple level IBSC model based on the detailed balance, but modified so a term accounting for the non-radioactive recombination (NRR) is also included. The model is completed with constant fitting parameters so the concentration JL-VOC curves (which do not incorporate series resistance effects) can be fitted. Several QD-IBSCs where manufactured, measured and fitted with this model, rendering relevant information about the recombination nature of the QD-IBSCs

Más información

ID de Registro: 8337
Identificador DC: http://oa.upm.es/8337/
Identificador OAI: oai:oa.upm.es:8337
URL Oficial: http://www.photovoltaic-conference.com/conference/conference-proceedings.html
Depositado por: Memoria Investigacion
Depositado el: 26 Jul 2011 09:54
Ultima Modificación: 20 Abr 2016 17:10
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