Ionization energy levels in C-doped InxGa1-xN alloys

Tablero Crespo, César (2010). Ionization energy levels in C-doped InxGa1-xN alloys. "Applied Physics Letters", v. 97 (n. 192102); pp. 1-3. ISSN 0003-6951. https://doi.org/10.1063/1.3515854.

Description

Title: Ionization energy levels in C-doped InxGa1-xN alloys
Author/s:
  • Tablero Crespo, César
Item Type: Article
Título de Revista/Publicación: Applied Physics Letters
Date: November 2010
ISSN: 0003-6951
Volume: 97
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The InxGa1−xN alloys present levels as a result of the intentional (doped) or unintentional (contamination) introduction of C atoms into the host semiconductor. The III-V nitride semiconductors and their alloys usually crystallize in the wurtzite structure although the zinc blende structure has also been grown. We obtained the InxGa1−xN:C ionization energies from first-principles calculations of the two ordered wurtzite and zinc blende structures using different exchange and correlation terms. In accordance with the experimental results, the ionization levels could give rise, on some occasions, to a metallic impurity band.

Funding Projects

TypeCodeAcronymLeaderTitle
FP7211640IBPOWERUnspecifiedIntermediate Band Materials and Solar Cells for Photovoltaics with High Efficiency and Reduced Cost

More information

Item ID: 8348
DC Identifier: http://oa.upm.es/8348/
OAI Identifier: oai:oa.upm.es:8348
DOI: 10.1063/1.3515854
Official URL: http://apl.aip.org/resource/1/applab/v97/i19/p192102_s1?isAuthorized=no
Deposited by: Memoria Investigacion
Deposited on: 19 Jul 2011 12:30
Last Modified: 03 Nov 2014 12:40
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