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Ionization energy levels in C-doped InxGa1-xN alloys
Tablero Crespo, César
Ionization energy levels in C-doped InxGa1-xN alloys.
"Applied Physics Letters", v. 97
||Ionization energy levels in C-doped InxGa1-xN alloys
|Título de Revista/Publicación:
||Applied Physics Letters
||E.T.S.I. Telecomunicación (UPM)
|Creative Commons Licenses:
||Recognition - No derivative works - Non commercial
The InxGa1−xN alloys present levels as a result of the intentional (doped) or unintentional (contamination) introduction of C atoms into the host semiconductor. The III-V nitride semiconductors and their alloys usually crystallize in the wurtzite structure although the zinc blende structure has also been grown. We obtained the InxGa1−xN:C ionization energies from first-principles calculations of the two ordered wurtzite and zinc blende structures using different exchange and correlation terms. In accordance with the experimental results, the ionization levels could give rise, on some occasions, to a metallic impurity band.
|FP7||211640||IBPOWER||Unspecified||Intermediate Band Materials and Solar Cells for Photovoltaics with High Efficiency and Reduced Cost|
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