Acceptor and donor ionization energy levels in O-doped ZnTe

Tablero Crespo, César (2010). Acceptor and donor ionization energy levels in O-doped ZnTe. "Computational Materials Science", v. 49 (n. 2); pp. 368-371. ISSN 0927-0256. https://doi.org/10.1016/j.commatsci.2010.05.023.

Description

Title: Acceptor and donor ionization energy levels in O-doped ZnTe
Author/s:
  • Tablero Crespo, César
Item Type: Article
Título de Revista/Publicación: Computational Materials Science
Date: August 2010
ISSN: 0927-0256
Volume: 49
Subjects:
Freetext Keywords: Ionization levels; ZnTe:O; Intermediate band; Photovoltaics
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The O-doped ZnTe (ZnTe1−xOx) alloys present induce levels through O doping into the host semiconductor gap. ZnTe usually crystallizes in the zinc-blend structure and ZnO in the wurtzite structure under normal conditions. Therefore two possible ZnTe1−xOx phases may coexist, although in different proportions, depending on experimental growth conditions. We present total energy calculations and analyze some of their electronic properties with respect to: the two ordered wurtzite and zinc-blende structures, the concentration (x from 0.0078 to 0.5), the localized basis set (from single-zeta to quadruple-zeta with polarization basis sets), and the variation of the ionization levels with x and with the distance O–Zn.

Funding Projects

TypeCodeAcronymLeaderTitle
FP7211640IBPOWERUnspecifiedIntermediate Band Materials and Solar Cells for Photovoltaics with High Efficiency and Reduced Cost

More information

Item ID: 8355
DC Identifier: http://oa.upm.es/8355/
OAI Identifier: oai:oa.upm.es:8355
DOI: 10.1016/j.commatsci.2010.05.023
Official URL: http://www.sciencedirect.com
Deposited by: Memoria Investigacion
Deposited on: 14 Jul 2011 10:54
Last Modified: 31 Oct 2014 12:19
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