Theoretical optimization of GaInP/GaAs dual-junction solar cell: Toward a 36% efficiency at 1000 suns

Baudrit, Mathieu and Algora del Valle, Carlos (2010). Theoretical optimization of GaInP/GaAs dual-junction solar cell: Toward a 36% efficiency at 1000 suns. "Physica Status Solidi A", v. 207 (n. 2); pp. 474-478. ISSN 1862-6300. https://doi.org/10.1002/pssa.200925210.

Description

Title: Theoretical optimization of GaInP/GaAs dual-junction solar cell: Toward a 36% efficiency at 1000 suns
Author/s:
  • Baudrit, Mathieu
  • Algora del Valle, Carlos
Item Type: Article
Título de Revista/Publicación: Physica Status Solidi A
Date: February 2010
ISSN: 1862-6300
Volume: 207
Subjects:
Freetext Keywords: 81.05.Ea;84.60.Bk;84.60.Jt;85.30.De
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

A theoretical conversion efficiency of 36.4% at 1000 suns concentration has been determined by means of realistic models and an improved optimization routine. The starting point device was the recent world-record monolithic GaInP/GaAs dual-junction solar cell that was grown lattice matched on a GaAs substrate by MOVPE, which has an efficiency of 32.6% at 1000 suns. Using previously calibrated models developed at our institution, IES-UPM, together with Silvaco ATLAS TCAD software, we reproduced the characteristics of the world-record solar cell, and then determined a cell configuration that would yield greater efficiency by using an optimization routine to hone the doping concentration and the thickness of each layer.

More information

Item ID: 8391
DC Identifier: http://oa.upm.es/8391/
OAI Identifier: oai:oa.upm.es:8391
DOI: 10.1002/pssa.200925210
Official URL: http://onlinelibrary.wiley.com/doi/10.1002/pssa.200925210/abstract
Deposited by: Memoria Investigacion
Deposited on: 13 Sep 2011 08:35
Last Modified: 20 Apr 2016 17:12
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