Degradation mechanism analysis in temperature stress tests on III-V ultra-high concentrator solar cells using a 3D distributed model

Espinet González, Pilar and Algora del Valle, Carlos and González Ciprián, José Ramón and Nuñez Mendoza, Neftali and Vázquez López, Manuel (2010). Degradation mechanism analysis in temperature stress tests on III-V ultra-high concentrator solar cells using a 3D distributed model. "Microelectronics Reliability", v. 50 (n. 9-11); pp. 1875-1879. ISSN 0026-2714. https://doi.org/10.1016/j.microrel.2010.07.128.

Description

Title: Degradation mechanism analysis in temperature stress tests on III-V ultra-high concentrator solar cells using a 3D distributed model
Author/s:
  • Espinet González, Pilar
  • Algora del Valle, Carlos
  • González Ciprián, José Ramón
  • Nuñez Mendoza, Neftali
  • Vázquez López, Manuel
Item Type: Article
Título de Revista/Publicación: Microelectronics Reliability
Date: September 2010
ISSN: 0026-2714
Volume: 50
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

A temperature stress test was carried out on GaAs single-junction solar cells to analyze the degradation suffered when working at ultra-high concentrations. The acceleration of the degradation was realized at two different temperatures: 130 °C and 150 °C. In both cases, the degradation trend was the same, and only gradual failures were observed. A fit of the dark I–V curve at 25 °C with a 3D distributed model before and after the test was done. The fit with the 3D distributed model revealed degradation at the perimeter because the recombination current in the depletion region of the perimeter increased by about fourfold after the temperature stress test. Therefore, this test did not cause any morphological change in the devices, and although the devices were isolated with silicone, the perimeter region was revealed as the most fragile component of the solar cell. Consequently, the current flowing beneath the busbar favors the progression of defects in the device in the perimeter region.

More information

Item ID: 8403
DC Identifier: http://oa.upm.es/8403/
OAI Identifier: oai:oa.upm.es:8403
DOI: 10.1016/j.microrel.2010.07.128
Official URL: http://www.sciencedirect.com/science/article/pii/S0026271410004014
Deposited by: Memoria Investigacion
Deposited on: 07 Sep 2011 12:17
Last Modified: 20 Apr 2016 17:12
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