Nanoscale electrical characterization of arrowhead defects in GalnP thin films grown on Ge

Beinik, I.; Galiana Blanco, Beatriz; Kratzer, M.; Teichert, C.; Rey-Stolle Prado, Ignacio; Algora del Valle, Carlos y Tejedor, P. (2010). Nanoscale electrical characterization of arrowhead defects in GalnP thin films grown on Ge. "Journal of Vacuum Science and Technology B", v. 28 (n. 4); pp.. ISSN 1071-1023. https://doi.org/10.1116/1.3454373.

Descripción

Título: Nanoscale electrical characterization of arrowhead defects in GalnP thin films grown on Ge
Autor/es:
  • Beinik, I.
  • Galiana Blanco, Beatriz
  • Kratzer, M.
  • Teichert, C.
  • Rey-Stolle Prado, Ignacio
  • Algora del Valle, Carlos
  • Tejedor, P.
Tipo de Documento: Artículo
Título de Revista/Publicación: Journal of Vacuum Science and Technology B
Fecha: Julio 2010
Volumen: 28
Materias:
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

In this work the authors present an electrical characterization of the so called arrowhead defects (ADs) in GaInP thin films grown on Ge(100) substrates misoriented by 6° toward (111). The samples have been evaluated by means of conductive atomic force microscopy (C-AFM) and Kelvin probe force microscopy (KPFM). It is shown that the ADs have terminating planes which are composed from two alternating subplanes inclined 12° (close to {105} plane) and 6° (close to {109}) with respect to the (100) plane. The terminating planes of the arrowhead defects possess higher conductivity compared to their surrounding. The terminating planes differ also in their electrical behavior from each other, demonstrating different values of conductivity (C-AFM) and bucking voltages (KPFM). The difference in current densities between two terminating planes was found to be ∼ 170±35 μA/m2 at −3 V, and the difference in the bucking voltages was ∼ 70 mV at 5 V of the electrical excitation signal in the lift mode. It is suggested that the distinctive electrical behavior of the ADs is caused by an ordering effect which leads in this case to the degraded electrical properties of the ADs.

Más información

ID de Registro: 8404
Identificador DC: http://oa.upm.es/8404/
Identificador OAI: oai:oa.upm.es:8404
Identificador DOI: 10.1116/1.3454373
URL Oficial: http://avspublications.org/jvstb/resource/1/jvtbd9/v28/i4
Depositado por: Memoria Investigacion
Depositado el: 14 Jul 2011 08:50
Ultima Modificación: 20 Abr 2016 17:12
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